DMN601K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DMN601K

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.3 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 50 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 3 Ohm

Encapsulados: SOT23

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DMN601K datasheet

 ..1. Size:185K  diodes
dmn601k.pdf pdf_icon

DMN601K

DMN601K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-23 Case Material Molded Plastic, Green Molding Low Gate Threshold Voltage Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivi

 8.1. Size:148K  diodes
dmn601wk.pdf pdf_icon

DMN601K

DMN601WK N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance RDS(ON) Case SOT-323 Case Material Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per

 8.2. Size:493K  diodes
dmn6017sk3.pdf pdf_icon

DMN601K

DMN6017SK3 Green 60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TC = +25 C Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 18m @ VGS = 10V 43A 60V Halogen and Antimony Free. Green Device (Note 3) 20m @ VGS = 4.5V 41A Qualified to AEC-Q101 Standards for H

 8.3. Size:322K  diodes
dmn6013lfg.pdf pdf_icon

DMN601K

DMN6013LFG 60V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low RDS(ON) ensures on state losses are minimized ID max V(BR)DSS RDS(ON) max Small form factor thermally efficient package enables higher TA = +25 C 13m @ VGS = 10V 10.3A density end products 60V 18m @ VGS = 4.5V 8.8A Occupies just 33% of the board area o

Otros transistores... DMN5L06DWK, DMN5L06K, DMN5L06TK, DMN5L06VAK, DMN5L06VK, DMN5L06WK, DMN601DMK, DMN601DWK, 4435, DMN601TK, DMN601VK, DMN601WK, DMN6066SSD, DMN6066SSS, DMN6068LK3, DMN6068SE, DMN62D1SFB