2SK507 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK507

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 15 V

|Id|ⓘ - Corriente continua de drenaje: 0.05 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm

Encapsulados: SST

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2SK507 datasheet

 ..1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf pdf_icon

2SK507

 9.1. Size:317K  nec
 2sk508.pdf pdf_icon

2SK507

DATA SHEET JUNCTION FIELD EFFECT TRANSISTOR 2SK508 HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR PACKAGE DRAWING (Unit mm) DESCRIPTION The 2SK508 is low input capacitance and High forward transfer 2.8 0.2 +0.1 admittance, it is suitable for AM tuner, wireless installation and 0.65 0.15 1.5 cordless telephone. 2 FEATURES

 9.2. Size:139K  utc
 2sk508.pdf pdf_icon

2SK507

UNISONIC TECHNOLOGIES CO., LTD 2SK508 Preliminary N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT 3 TRANSISTOR 1 2 DESCRIPTION SOT-23 (EIAJ TO-236) The UTC 2SK508 is NPN transistor with High forward transfer admittance and low input capacitance. It is suitable for cordless telephone, AM tuner and wireless installation, etc. FEATURES

Otros transistores... 2SK3272-01L, 2SK3272-01S, 2SK3273-01MR, 2SK3274, 2SK3275-01L, 2SK3275-01S, 2SK3370, 2SK505, 8205A, 2SK514, 2SK518, 2SK519, 2SK523, 2SK533, 2SK611, 2SK612, 2SK654