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2SK507 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK507
   Tipo de FET: JFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 15 V
   |Id|ⓘ - Corriente continua de drenaje: 0.05 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 200 Ohm
   Paquete / Cubierta: SST

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2SK507 Datasheet (PDF)

 9.1. Size:317K  nec
2sk508.pdf

2SK507
2SK507

DATA SHEETJUNCTION FIELD EFFECT TRANSISTOR2SK508HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR PACKAGE DRAWING (Unit: mm) DESCRIPTION The 2SK508 is low input capacitance and High forward transfer 2.8 0.2+0.1admittance, it is suitable for AM tuner, wireless installation and 0.65 0.151.5cordless telephone. 2 FEATURES

 9.2. Size:139K  utc
2sk508.pdf

2SK507
2SK507

UNISONIC TECHNOLOGIES CO., LTD 2SK508 Preliminary N-CHANNEL JFET HIGH FREQUENCY AMPLIFIER N-CHANNEL SILICON JUNCTION FIELD EFFECT 3TRANSISTOR 12 DESCRIPTION SOT-23(EIAJ TO-236)The UTC 2SK508 is NPN transistor with High forward transferadmittance and low input capacitance. It is suitable for cordless telephone, AM tuner and wirelessinstallation, etc. FEATURES

Otros transistores... 2SK3272-01L , 2SK3272-01S , 2SK3273-01MR , 2SK3274 , 2SK3275-01L , 2SK3275-01S , 2SK3370 , 2SK505 , STP75NF75 , 2SK514 , 2SK518 , 2SK519 , 2SK523 , 2SK533 , 2SK611 , 2SK612 , 2SK654 .

 

 
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