AGM402A Todos los transistores

 ..1. Size:2483K  cn agmsemi
 agm402a.pdf

AGM402A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =

 0.1. Size:1185K  cn agmsemi
 agm402a1.pdf

AGM402A1 Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj VGS, Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V

 8.1. Size:1183K  cn agmsemi
 agm402c.pdf

AGM402C Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj VGS, Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V)

 8.2. Size:1321K  cn agmsemi
 agm402c1.pdf

AGM402C1 General Description Product Summary The AGM402C1 combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 2.3m 170A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimiz

 8.3. Size:790K  cn agmsemi
 agm4025d.pdf

AGM4025D General Description Product Summary The AGM4025D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 40V 2.2m 125A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi

 8.4. Size:1159K  cn agmsemi
 agm4025q.pdf

AGM4025Q N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T

 8.5. Size:763K  cn agmsemi
 agm402h.pdf

AGM402H General Description Product Summary The AGM402H combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 2.6m 170A protection applications. Features TO-263 Pin Configuration Advance high cell density Trench technology Low R to minimize

 8.6. Size:1061K  cn agmsemi
 agm402d.pdf

AGM402D General Description Product Summary The AGM402D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 2.4m 125A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 8.7. Size:1148K  cn agmsemi
 agm4025a.pdf

AGM4025A Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th) J DSON J www.agm-mos.com 3 VER2.68 AGM4025A Fig.7 Capacitance Fig.8 Safe Operating Area 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 PDM TON 0.01

 8.8. Size:1306K  cn agmsemi
 agm402q.pdf

AGM402Q Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =