AGM403Q Todos los transistores

 ..1. Size:1291K  cn agmsemi
 agm403q.pdf

AGM403Q N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T

 8.1. Size:1482K  cn agmsemi
 agm403a1.pdf

AGM403A1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 8.2. Size:1354K  cn agmsemi
 agm403d1.pdf

AGM403D1 General Description Product Summary The AGM403D1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 40V 2.7m 120A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minim

 8.3. Size:938K  cn agmsemi
 agm403dg.pdf

AGM403DG General Description Product Summary The AGM403DG combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for applications. 40V 3.0m 101A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to min

 8.4. Size:845K  cn agmsemi
 agm403ap.pdf

AGM403AP N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T

 8.5. Size:1175K  cn agmsemi
 agm403a1-ku.pdf

AGM403A1-KU General Description Product Summary The AGM403A1-KU combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 40V 2.7m 120A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R t