AGM612S Todos los transistores

 ..1. Size:1109K  cn agmsemi
 agm612s.pdf

AGM612S General Description Product Summary The AGM612S combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 60V 11m 11A Advance high cell density Trench technology SOP8 Pin Configuration Low R to minimize cond

 8.1. Size:980K  cn agmsemi
 agm612mbq.pdf

AGM612MBQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 8.2. Size:1421K  cn agmsemi
 agm612d.pdf

AGM612D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 8.3. Size:1190K  cn agmsemi
 agm612mn.pdf

AGM612MN Typical Characteristics Power Capability Current Capability 1.2 18 16 1.0 14 0.9 12 0.8 10 0.7 8 0.6 6 0.5 4 0.4 2 TC=25oC,VG=10V TC=25oC 0.3 0 0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 Tmp Mounting Point Temp. ( Tmp Mounting Point Temp. ( C) C) Safe Operating Area Transient Thermal Impedance 200 2 100 1 Duty = 0.5

 8.4. Size:1243K  cn agmsemi
 agm612ap.pdf

AGM612AP General Description Product Summary The AGM612AP combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for applications. 60V 11m 50A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to m

 8.5. Size:1330K  cn agmsemi
 agm612mna.pdf

AGM612MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =

 8.6. Size:979K  cn agmsemi
 agm612mbp.pdf

AGM612MBP General Description Product Summary The AGM612MBP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 60V 10.5m 29A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to