AGM614MNA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM614MNATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM614MNTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D60 -- -- VZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- --GS DS nAI GSS 100VGS(th) Gate Threshold Voltage V

AGM614MBPTypical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th) J DSON Jwww.agm-mos.com 3 VER2.66AGM614MBPFig.7 Capacitance Fig.8 Safe Operating Area 1DUTY=0.50.20.10.10.05PDM TON0.02T0

AGM614MBP-M1Electrical characteristics diagramsFig.1 Typ. transfer characteristics Fig.2 Typ. output characteristics8080VDS=5V10V 8V 7V60606V40405.5V20150 205V25-55 VGS=4.5V000 2 4 6 8 100 1 2 3 4 5 V (V) V (V)GS DS Fig.3 Normalized on-resistance vs drain current Fig.4 Typ. on-resistance vs gate-source voltage 505ID=30A404