AGM615MN MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM615MNTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM615MNATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =48V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM615D General DescriptionProduct SummaryThe AGM615D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery60V 11.5m45Aprotection applications.TO-252 Pin Configuration FeaturesAdvance high cell density Trench technology Low R to minimiz

AGM614MNTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D60 -- -- VZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- --GS DS nAI GSS 100VGS(th) Gate Threshold Voltage V

AGM612MBQTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM614MBPTypical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th) J DSON Jwww.agm-mos.com 3 VER2.66AGM614MBPFig.7 Capacitance Fig.8 Safe Operating Area 1DUTY=0.50.20.10.10.05PDM TON0.02T0

AGM612DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM612MN Typical CharacteristicsPower Capability Current Capability 1.2 18161.0140.9120.8100.780.660.540.42TC=25oC,VG=10VTC=25oC0.3 00 20 40 60 80 100 120 140 160 1800 20 40 60 80 100 120 140 160Tmp Mounting Point Temp. ( Tmp Mounting Point Temp. (C) C) Safe Operating Area Transient Thermal Impedance 200 2100 1Duty = 0.5

AGM614D General DescriptionProduct SummaryThe AGM614D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.60V 10m53A FeaturesAdvance high cell density Trench technology TO-252 Pin Configuration Low R to minimize c

AGM614MNATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM612AP General DescriptionProduct SummaryThe AGM612AP combines advanced trench MOSFETtotechnology with a low resistance package provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protectionforapplications.60V 11m 50A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to m

AGM612MNATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =

AGM612MBP General DescriptionProduct SummaryThe AGM612MBP combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 60V 10.5m 29AAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R to

AGM614A-GTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V

AGM614MBP-M1Electrical characteristics diagramsFig.1 Typ. transfer characteristics Fig.2 Typ. output characteristics8080VDS=5V10V 8V 7V60606V40405.5V20150 205V25-55 VGS=4.5V000 2 4 6 8 100 1 2 3 4 5 V (V) V (V)GS DS Fig.3 Normalized on-resistance vs drain current Fig.4 Typ. on-resistance vs gate-source voltage 505ID=30A404

AGM610M General DescriptionProduct SummaryThe AGM610M combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 60V 12m 12AAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimize conduc

AGM612S General DescriptionProduct SummaryThe AGM612S combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 60V 11m 11AAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimize cond

AGM610MN General DescriptionProduct SummaryThe AGM610MN combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 60V 12m 12AAdvance high cell density Trench technologySOP8 Pin Configuration Low R to minimize co