AGM404Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AGM404Q
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.2 VQgⓘ - Carga de la puerta: 13.5 nC
trⓘ - Tiempo de subida: 49.5 nS
Cossⓘ - Capacitancia de salida: 321 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0059 Ohm
Paquete / Cubierta: PDFN5X6
Búsqueda de reemplazo de AGM404Q MOSFET
AGM404Q Datasheet (PDF)
agm404q.pdf
AGM404QElectrical Characteristics Diagrams100 50VGS = 6 VVDS = 5 V90VGS = 4.5 V80 40VGS = 4 V70 VGS = 10 V60 30VGS = 3.5 V5040 203012525VGS = 3 V20 10100 00 0.5 1 1.5 2 0 1 2 3 4 5 6VGS (V)VDS (V)Figure 2: Transfer CharacteristicsFigure 1: On-Region Characteristics 102.191.9VGS = 4.5 V VGS = 10 V81.7ID = 20 A71.56 1
agm404a.pdf
AGM404ATypical Performance CharacteristicsFigure 2: Typical Transfer CharacteristicsFigure1: Output CharacteristicsID (A)ID (A)12012010V1001004.5V 4V808060603.5V4040125252020VGS=3VVDS(V)VGS(V)000 1.0 2.0 3.0 4.0 5.00 2 4 6 8 10Figure 4: Body Diode CharacteristicsFigure 3:On-resistance vs. Drain CurrentIS(A)RDS(ON) (m)
agm404ap1.pdf
AGM404AP1 General DescriptionProduct SummaryThe AGM404AP1 combines advanced trench MOSFETtotechnology with a low resistance package provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protectionfor40V 4.4m 46Aapplications. Features PDFN3.3*3.3 Pin ConfigurationAdvance high cell density Trench technologyLow R to
agm404d.pdf
AGM404DGM General DescriptionProduct SummaryThe AGM404D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery40V 4.5m 82Aprotection applications.TO-252 Pin Configuration FeaturesAdvance high cell density Trench technology Low R to mini
Otros transistores... FTP16N06A , HCA60R070F , HYG043N10NS2P , HYG043N10NS2B , RM150N100HD , SLB40N26C , SLI40N26C , AGM404D , SPP20N60C3 , AGM405A , AGM405AP1 , AGM405AP2 , AGM405D , AGM405DG , AGM405F , AGM405MBP , AGM405MNA .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM406MNQ | AGM406MNA | AGM406MBQ | AGM406MBP | AGM406AP | AGM405Q | AGM405MNA | AGM405MBP | AGM405F | AGM405DG | AGM405D | AGM405AP2 | AGM405AP1 | AGM405A | AGM404Q | AGM404D
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