AGM405AP2 Todos los transistores

AGM405AP2 General Description Product Summary The AGM405AP2 combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for 40V 4.4m 46A applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology Low R t

AGM405AP1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

AGM405A Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 150 100 5V 10V VDS=5V 4V 120 80 6V 3.5V 25 60 90 60 40 125 VGS=3V 30 20 VGS(V) VDS(V) 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 2.5 3 3.5 4 4.5 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current I

AGM405MBP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 40 -- -- V Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

AGM405D Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 150 100 5V 10V VDS=5V 4V 120 80 6V 3.5V 25 60 90 60 40 125 VGS=3V 30 20 VGS(V) VDS(V) 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 2.5 3 3.5 4 4.5 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current I

AGM405DG Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

AGM405F Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 150 100 5V 10V VDS=5V 4V 120 80 6V 3.5V 25 60 90 60 40 125 VGS=3V 30 20 VGS(V) VDS(V) 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 2.5 3 3.5 4 4.5 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current I

AGM405MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

AGM405Q Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs. T Fig.6 Normalized R vs. T GS(th) J DSON J www.agm-mos.com 3 VER2.8 AGM405Q Fig.7 Capacitance Fig.8 Safe Operating Area 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 TON T 0.