AGM405DG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM405DGTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

AGM405DTypical Performance Characteristics Figure 2: Typical Transfer CharacteristicsFigure1: Output CharacteristicsID (A)ID (A)150 1005V10V VDS=5V4V120 806V3.5V 25609060 40125VGS=3V30 20VGS(V)VDS(V)0 00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.02 2.5 3 3.5 4 4.5Figure 4: Body Diode CharacteristicsFigure 3:On-resistance vs. Drain CurrentI

AGM405AP1Table 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM405ATypical Performance Characteristics Figure 2: Typical Transfer CharacteristicsFigure1: Output CharacteristicsID (A)ID (A)150 1005V10V VDS=5V4V120 806V3.5V 25609060 40125VGS=3V30 20VGS(V)VDS(V)0 00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.02 2.5 3 3.5 4 4.5Figure 4: Body Diode CharacteristicsFigure 3:On-resistance vs. Drain CurrentI

AGM405MBPTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter ConditionsMin Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250AGS D40 -- -- VZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100VGS(th) Gate Threshold Voltage V

AGM405FTypical Performance Characteristics Figure 2: Typical Transfer CharacteristicsFigure1: Output CharacteristicsID (A)ID (A)150 1005V10V VDS=5V4V120 806V3.5V 25609060 40125VGS=3V30 20VGS(V)VDS(V)0 00 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.02 2.5 3 3.5 4 4.5Figure 4: Body Diode CharacteristicsFigure 3:On-resistance vs. Drain CurrentI

AGM405AP2 General DescriptionProduct SummaryThe AGM405AP2 combines advanced trench MOSFETtotechnology with a low resistance package provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protectionfor40V 4.4m 46Aapplications.PDFN3.3*3.3 Pin Configuration FeaturesAdvance high cell density Trench technologyLow R t

AGM405MNATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 -- -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage V

AGM405QTypical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs. T Fig.6 Normalized R vs. T GS(th) J DSON Jwww.agm-mos.com 3 VER2.8AGM405QFig.7 Capacitance Fig.8 Safe Operating Area 1DUTY=0.50.30.10.10.05PDM0.02TONT0.