AGM60P85D Todos los transistores

 ..1. Size:1214K  cn agmsemi
 agm60p85d.pdf

AGM60P85D Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.65 AGM60P85D Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area

 6.1. Size:1076K  cn agmsemi
 agm60p85e.pdf

AGM60P85E Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65 AGM60P85AP 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65 AGM60P85E SOT23-3 Marking Instructions www.agm-mos.com 7 VER2.65 AGM60P85E Disclaimer Th

 6.2. Size:1184K  cn agmsemi
 agm60p85ap.pdf

AGM60P85AP General Description Product Summary The AGM60P85AP combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery -60V 80m -14A protection applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology R to minimize

 8.1. Size:1659K  cn agmsemi
 agm60p20ap.pdf

AGM60P20AP Typ. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) D 200 30 -10V -4.0V -4.5V 25 -5.0V 150 20 -4.5V 15 -5.0V 10 100 -4.0V -10V 5 0 50 0 1 2 3 4 5 0 5 10 15 20 -VDS[V] -ID[A] Typ. transfer characteristics Typ. forward transconductance -I =f(-V ) g =f(-I ) D GS fs D 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 5

 8.2. Size:973K  cn agmsemi
 agm60p06s.pdf

AGM60P06S P-Channel Typical Characteristics 160 12 ID=-3A VGS=-3V 10 120 8 6 VGS=-10V 4 80 VGS=-7V VGS=-5V 2 VGS=-4.5V 0 40 0 0.5 1 1.5 2 2 4 6 8 10 -VDS , Drain-to-Source Voltage (V) -VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 12 10 ID=-3A 10 8 8 6 6 TJ=150 TJ=25 4 4 2 2 0 0 0.2 0.4 0.6 0.8 1 0 5 10 15 20 25 -V

 8.3. Size:1121K  cn agmsemi
 agm60p35f.pdf

AGM60P35F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -60 -- -- V GS D Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 8.4. Size:1316K  cn agmsemi
 agm60p14a.pdf

AGM60P14A General Description The AGM60P14A combines advanced trench MOSFET Product Summary to provide technology with a low resistance package extremely low R DS(ON) This device is ideal and battery for load switch BVDSS RDSON ID protection applications. -60V 18m -52A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize

 8.5. Size:1942K  cn agmsemi
 agm60p100a.pdf

AGM60P100A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -60 -- -- V GS D Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 8.6. Size:1683K  cn agmsemi
 agm60p20d.pdf

AGM60P20D General Description Product Summary The AGM60P20D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -60V 57m -18A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize co

 8.7. Size:1513K  cn agmsemi
 agm60p20r.pdf

AGM60P20R General Description Product Summary The AGM60P20R combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -60V 65m -10A Features Advance high cell density Trench technology SOT-223-3L Pin Configuration Low R to minimiz

 8.8. Size:1314K  cn agmsemi
 agm60p30ap.pdf

AGM60P30AP General Description Product Summary The AGM60P30AP combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -60V 40m -30A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mini

 8.9. Size:1595K  cn agmsemi
 agm60p30c.pdf

AGM60P30C Typical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 35 VGS= -5,-6,-7,-8,-9,-10V 35 -4V 30 30 VGS= -4.5V 25 25 20 20 15 10 VGS= -10V 15 5 -3V 0 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 -VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 60 1.8 IDS = -250 A ID

 8.10. Size:3388K  cn agmsemi
 agm60p90d.pdf

AGM60P90D Typical Characteristics Fig -VDS, -Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical -V Gate -Source Voltage Vs. Tj GS(TH) - - - - Fig Tj - Junction Temperature ( C) -VGS, -Gate -Source Voltage (V) Fig4. Typical Normalized On-Resistance Vs. Tj Fig3. Typical Transfer Characteristics -ID, -Drain-Source Curre

 8.11. Size:904K  cn agmsemi
 agm60p14d.pdf

AGM60P14D General Description Product Summary The AGM60P14D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -60V 18m -52A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 8.12. Size:1175K  cn agmsemi
 agm60p14ap.pdf

AGM60P14AP General Description The AGM60P14AP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal and battery for load switch BVDSS RDSON ID protection applications. Features -60V 18m -52A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to m

 8.13. Size:1343K  cn agmsemi
 agm60p30d.pdf

AGM60P30D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -60 -- -- V GS D Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 8.14. Size:1315K  cn agmsemi
 agm60p40a.pdf

AGM60P40A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -60 -- -- V GS D Zero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 8.15. Size:1588K  cn agmsemi
 agm60p30a.pdf

AGM60P30A General Description Product Summary The AGM60P30A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery applications. -60V 50m -30A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimize c

 8.16. Size:1450K  cn agmsemi
 agm60p90a.pdf

AGM60P90A Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.66 AGM60P90A Test Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.66 AGM60P90A Dimensions PDFN5*6 D2 D MILLIMETER SYMBOL MIN Typ. MAX A 0.

 8.17. Size:1162K  cn agmsemi
 agm60p40d.pdf

AGM60P40D Typical Characteristics 30 12 ID=-12A 10 28 VGS=-10V 8 VGS=-7V 26 VGS=-5V 6 VGS=-4.5V 24 4 22 VGS=-3V 2 0 20 0 0.25 0.5 0.75 1 2 4 6 8 10 -VDS Drain-to-Source Voltage (V) -VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V ID=-12A 10 8 8 6 6 TJ=150 TJ=25 4 4 2 2 0 0 0 20 40 60 0.2 0.4 0.6 0.