AGM408MN Todos los transistores

 ..1. Size:1840K  cn agmsemi
 agm408mn.pdf

AGM408MN Typical Characteristics 2.7 40 10V,6V,5V,4.5V,4V IDS= 250uA 2.4 Max 2.1 30 VGS= 3.5V 1.8 Typ 1.5 20 1.2 Min 0.9 10 VGS= 3V Notes 0.6 1. 250 s pulse test 2. Tj=25 C 0.3 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -Source Voltage Vs. T

 7.1. Size:1072K  cn agmsemi
 agm408m.pdf

AGM408M Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =

 9.1. Size:1269K  cn agmsemi
 agm40p25a.pdf

AGM40P25A Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -40 -- -- V Zero Gate Voltage Drain Current V =-40V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =V

 9.2. Size:1183K  cn agmsemi
 agm402c.pdf

AGM402C Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj VGS, Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V)

 9.3. Size:928K  cn agmsemi
 agm405ap1.pdf

AGM405AP1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 9.4. Size:1169K  cn agmsemi
 agm401ll.pdf

AGM401LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 -- V Gate Threshold Voltage V =V

 9.5. Size:1056K  cn agmsemi
 agm40p30d.pdf

AGM40P30D General Description The AGM40P30D combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch protection applications. -40V 25m -30A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize

 9.6. Size:1229K  cn agmsemi
 agm404a.pdf

AGM404A Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 120 120 10V 100 100 4.5V 4V 80 80 60 60 3.5V 40 40 125 25 20 20 VGS=3V VDS(V) VGS(V) 0 0 0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 8 10 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current IS(A) RDS(ON) (m )

 9.7. Size:1200K  cn agmsemi
 agm409a.pdf

AGM409A Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs.Tj VGS, Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V) Fig5. T

 9.8. Size:527K  cn agmsemi
 agm40p35a.pdf

AGM40P35A General Description Product Summary The AGM40P35A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 11m -60A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 9.9. Size:1872K  cn agmsemi
 agm4005llm1.pdf

AGM4005LLM1 General Description Product Summary The AGM4005LLM1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal BVDSS RDSON ID for load switch and battery protection applications. 40V 0.92m 330A Features Advance high cell density Trench technology TOLL Pin Configuration Low R to mi

 9.10. Size:1482K  cn agmsemi
 agm403a1.pdf

AGM403A1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 9.11. Size:1323K  cn agmsemi
 agm40p55ap.pdf

AGM40P55AP General Description Product Summary The AGM40P55AP combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 8.9m -50A Features PDFN3.3*3.3 Pin Configuration Advance high cell density Trench technology Low R to min

 9.12. Size:1712K  cn agmsemi
 agm406mbq.pdf

AGM406MBQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I 100 GSS V Gate Threshold Voltage V =V ,I =2

 9.13. Size:1901K  cn agmsemi
 agm401c.pdf

AGM401C General Description Product Summary The AGM401C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 1.2m 220A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize

 9.14. Size:1321K  cn agmsemi
 agm402c1.pdf

AGM402C1 General Description Product Summary The AGM402C1 combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 2.3m 170A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimiz

 9.15. Size:1016K  cn agmsemi
 agm40p100h.pdf

AGM40P100H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 9.16. Size:1185K  cn agmsemi
 agm402a1.pdf

AGM402A1 Typical Characteristics VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. VGS(TH) Gate -Source Voltage Vs. Tj VGS, Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Temperature VSD, Source-Drain Voltage (V) VDS, Drain -Source Voltage (V

 9.17. Size:1291K  cn agmsemi
 agm403q.pdf

AGM403Q N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T

 9.18. Size:1520K  cn agmsemi
 agm40p26e.pdf

AGM40P26E General Description Product Summary The AGM40P26E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 36m -5.8A protection applications. SOT23-3 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 9.19. Size:1406K  cn agmsemi
 agm40p55d.pdf

AGM40P55D General Description Product Summary The AGM40P55D combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 8.9m -50A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize c

 9.20. Size:1044K  cn agmsemi
 agm405a.pdf

AGM405A Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 150 100 5V 10V VDS=5V 4V 120 80 6V 3.5V 25 60 90 60 40 125 VGS=3V 30 20 VGS(V) VDS(V) 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 2.5 3 3.5 4 4.5 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current I

 9.21. Size:879K  cn agmsemi
 agm40p13s.pdf

AGM40P13S General Description Product Summary The AGM40P13S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 13m -8A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology Low R to minimize cond

 9.22. Size:790K  cn agmsemi
 agm4025d.pdf

AGM4025D General Description Product Summary The AGM4025D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery protection applications. 40V 2.2m 125A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimi

 9.23. Size:1159K  cn agmsemi
 agm4025q.pdf

AGM4025Q N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T

 9.24. Size:1190K  cn agmsemi
 agm404q.pdf

AGM404Q Electrical Characteristics Diagrams 100 50 VGS = 6 V VDS = 5 V 90 VGS = 4.5 V 80 40 VGS = 4 V 70 VGS = 10 V 60 30 VGS = 3.5 V 50 40 20 30 125 25 VGS = 3 V 20 10 10 0 0 0 0.5 1 1.5 2 0 1 2 3 4 5 6 VGS (V) VDS (V) Figure 2 Transfer Characteristics Figure 1 On-Region Characteristics 10 2.1 9 1.9 VGS = 4.5 V VGS = 10 V 8 1.7 ID = 20 A 7 1.5 6 1

 9.25. Size:2536K  cn agmsemi
 agm4012a.pdf

AGM4012A General Description Product Summary The AGM4012A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 1.1m 160A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to mini

 9.26. Size:1156K  cn agmsemi
 agm405mbp.pdf

AGM405MBP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A GS D 40 -- -- V Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 VGS(th) Gate Threshold Voltage V

 9.27. Size:1128K  cn agmsemi
 agm406mnq.pdf

AGM406MNQ Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 9.28. Size:1157K  cn agmsemi
 agm40p65ap.pdf

AGM40P65AP Typical Characteristics -VDS, - Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs. Tj GS(TH) -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Voltage (V)

 9.29. Size:763K  cn agmsemi
 agm402h.pdf

AGM402H General Description Product Summary The AGM402H combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 2.6m 170A protection applications. Features TO-263 Pin Configuration Advance high cell density Trench technology Low R to minimize

 9.30. Size:961K  cn agmsemi
 agm405d.pdf

AGM405D Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 150 100 5V 10V VDS=5V 4V 120 80 6V 3.5V 25 60 90 60 40 125 VGS=3V 30 20 VGS(V) VDS(V) 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 2.5 3 3.5 4 4.5 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current I

 9.31. Size:984K  cn agmsemi
 agm40p30ap.pdf

AGM40P30AP General Description The AGM40P30AP combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch protection applications. -40V 26m -33A Features PDFN3.3*3.3 Pin Configuration Advance high cell density Trench technology Low R to mi

 9.32. Size:970K  cn agmsemi
 agm405dg.pdf

AGM405DG Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 9.33. Size:1061K  cn agmsemi
 agm402d.pdf

AGM402D General Description Product Summary The AGM402D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 2.4m 125A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology Low R to minimize

 9.34. Size:1354K  cn agmsemi
 agm403d1.pdf

AGM403D1 General Description Product Summary The AGM403D1 combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 40V 2.7m 120A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minim

 9.35. Size:1612K  cn agmsemi
 agm40p26ap.pdf

AGM40P26AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 9.36. Size:986K  cn agmsemi
 agm406ap.pdf

AGM406AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 9.37. Size:646K  cn agmsemi
 agm40p65e.pdf

AGM40P65E General Description Product Summary The AGM40P65E combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. -40V 70m -5A Features Advance high cell density Trench technology SOT-23-3 Pin Configuration Low R to mi

 9.38. Size:937K  cn agmsemi
 agm405f.pdf

AGM405F Typical Performance Characteristics Figure 2 Typical Transfer Characteristics Figure1 Output Characteristics ID (A) ID (A) 150 100 5V 10V VDS=5V 4V 120 80 6V 3.5V 25 60 90 60 40 125 VGS=3V 30 20 VGS(V) VDS(V) 0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2 2.5 3 3.5 4 4.5 Figure 4 Body Diode Characteristics Figure 3 On-resistance vs. Drain Current I

 9.39. Size:1616K  cn agmsemi
 agm40p75d.pdf

AGM40P75D General Description The AGM40P75D combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 7.0m -70A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize

 9.40. Size:984K  cn agmsemi
 agm409d.pdf

AGM409D General Description Product Summary The AGM409D combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID device is ideal This for load switch and battery 40V 6.5m 63A protection applications. Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to minimize

 9.41. Size:991K  cn agmsemi
 agm404ap1.pdf

AGM404AP1 General Description Product Summary The AGM404AP1 combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for 40V 4.4m 46A applications. Features PDFN3.3*3.3 Pin Configuration Advance high cell density Trench technology Low R to

 9.42. Size:1058K  cn agmsemi
 agm4005ll.pdf

AGM4005LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I

 9.43. Size:824K  cn agmsemi
 agm4018s.pdf

AGM4018S Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 48 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =-

 9.44. Size:963K  cn agmsemi
 agm40p35ap.pdf

AGM40P35AP General Description Product Summary The AGM40P35AP combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -35A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mini

 9.45. Size:555K  cn agmsemi
 agm404d.pdf

AGM404D GM General Description Product Summary The AGM404D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 4.5m 82A protection applications. TO-252 Pin Configuration Features Advance high cell density Trench technology Low R to mini

 9.46. Size:997K  cn agmsemi
 agm405ap2.pdf

AGM405AP2 General Description Product Summary The AGM405AP2 combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for 40V 4.4m 46A applications. PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technology Low R t

 9.47. Size:1768K  cn agmsemi
 agm40p75a.pdf

AGM40P75A General Description Product Summary The AGM40P75A combines advanced trench to MOSFET technology with a low resistance package provide extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 7.0m -70A Features PDFN5*6 Pin Configuration Advance high cell density Trench technology Low R to minimize

 9.48. Size:1189K  cn agmsemi
 agm40p150c.pdf

AGM40P150C Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -40 -- -- V Zero Gate Voltage Drain Current V =-40V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 40V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =

 9.49. Size:1002K  cn agmsemi
 agm40p35d.pdf

AGM40P35D General Description Product Summary The AGM40P35D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -60A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize co

 9.50. Size:883K  cn agmsemi
 agm4008ll.pdf

AGM4008LL General Description Product Summary The AGM4008LL combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 0.63m 500A Features Advance high cell density Trench technology TOLL Pin Configuration Low R to minim

 9.51. Size:1148K  cn agmsemi
 agm4025a.pdf

AGM4025A Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs T Fig.6 Normalized R vs T GS(th) J DSON J www.agm-mos.com 3 VER2.68 AGM4025A Fig.7 Capacitance Fig.8 Safe Operating Area 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 PDM TON 0.01

 9.52. Size:1180K  cn agmsemi
 agm405mna.pdf

AGM405MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V

 9.53. Size:1267K  cn agmsemi
 agm406q.pdf

AGM406Q Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =

 9.54. Size:938K  cn agmsemi
 agm403dg.pdf

AGM403DG General Description Product Summary The AGM403DG combines advanced trench MOSFET to technology with a low resistance package provide extremely low R . DS(ON) BVDSS RDSON ID This device is ideal load switch and battery protection for applications. 40V 3.0m 101A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to min

 9.55. Size:2483K  cn agmsemi
 agm402a.pdf

AGM402A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =

 9.56. Size:858K  cn agmsemi
 agm40p30a.pdf

AGM40P30A Typical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature ( C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Voltage (V

 9.57. Size:1567K  cn agmsemi
 agm40p55a.pdf

AGM40P55A Typical Characteristics 80 80 VGS = -10V VGS = -3.5V VDS= -5V VGS = -4.5V 60 60 40 40 VGS = -3V 20 20 VGS = -2.5V 0 0 0 Drain-source voltage -VDS 4 5 1 2 3 0 1 2 3 (V) Gate-source voltage -VGS (V) 4 Figure 1. Output Characteristics Figure 2. Transfer Characteristics 10 80 ID= -16A 60 40 1 20 0 0.1 0 3 6 9 12 0.2 0.4 0.6 0.8 1.0 1.2 Gate-sourc

 9.58. Size:845K  cn agmsemi
 agm403ap.pdf

AGM403AP N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T

 9.59. Size:1241K  cn agmsemi
 agm40p100a.pdf

AGM40P100A Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.69 AGM40P100A Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-

 9.60. Size:1234K  cn agmsemi
 agm40p100c.pdf

AGM40P100C Table 3. Electrical Characteristics (Tj=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage

 9.61. Size:1175K  cn agmsemi
 agm403a1-ku.pdf

AGM403A1-KU General Description Product Summary The AGM403A1-KU combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 40V 2.7m 120A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R t

 9.62. Size:1199K  cn agmsemi
 agm405q.pdf

AGM405Q Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics Fig.5 Normalized V vs. T Fig.6 Normalized R vs. T GS(th) J DSON J www.agm-mos.com 3 VER2.8 AGM405Q Fig.7 Capacitance Fig.8 Safe Operating Area 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 TON T 0.

 9.63. Size:799K  cn agmsemi
 agm40p35a-ku.pdf

AGM40P35A-KU General Description The AGM40P35A-KU combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal for load switch and battery protection BVDSS RDSON ID applications. -40V 15m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to min

 9.64. Size:963K  cn agmsemi
 agm40p25ap.pdf

AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.7 AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gat

 9.65. Size:1600K  cn agmsemi
 agm406mbp.pdf

AGM406MBP Typical Characteristics 2.7 40 10V,6V,5V,4.5V,4V IDS= 250uA 2.4 Max 2.1 30 VGS= 3.5V 1.8 Typ 1.5 20 1.2 Min 0.9 10 VGS= 3V Notes 0.6 1. 250 s pulse test 2. Tj=25 C 0.3 0 0 25 50 75 100 125 150 175 0 1 2 3 4 5 VDS, Drain -Source Voltage (V) Tj - Junction Temperature ( C) Fig1. Typical Output Characteristics Fig2. Typical V Gate -Source Voltage Vs.

 9.66. Size:1646K  cn agmsemi
 agm40p26s.pdf

AGM40P26S General Description Product Summary The AGM40P26S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 32m -6.0A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology Low R to minimize co

 9.67. Size:1677K  cn agmsemi
 agm401a.pdf

AGM401A www.agm-mos.com 3 VER2.68 AGM401A www.agm-mos.com 5 VER2.68 AGM401A PDFN5*6 Marking Instructions Model1 Model2 www.agm-mos.com 7 VER2.68 AGM401A Disclaimer The information provided in this document is believed to be accurate and reliable. However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does not assume any responsibility for the following c

 9.68. Size:1306K  cn agmsemi
 agm402q.pdf

AGM402Q Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =

 9.69. Size:1161K  cn agmsemi
 agm406mna.pdf

AGM406MNA Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I