AGM40P150C MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM40P150CTable 2. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -40 ---- VZero Gate Voltage Drain Current V =-40V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =40V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =

AGM40P100HTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -40 -- -- VGS DZero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM40P13S General DescriptionProduct SummaryThe AGM40P13S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-40V 13m -8Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize cond

AGM40P100A Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.69AGM40P100AFigure 7. Gate Charge Waveforms Figure 8. CapacitanceFigure 9. Body-

AGM40P100CTable 3. Electrical Characteristics (Tj=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -40 -- -- VGS DZero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage