AGM60P14A Todos los transistores

 

AGM60P14A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AGM60P14A
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 52 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 99 nS
   Cossⓘ - Capacitancia de salida: 175 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: PDFN5X6
 

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AGM60P14A Datasheet (PDF)

 ..1. Size:1316K  cn agmsemi
 agm60p14a.pdf pdf_icon

AGM60P14A

AGM60P14A General DescriptionThe AGM60P14A combines advanced trench MOSFETProduct Summaryto providetechnology with a low resistance packageextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications.-60V 18m -52A Features Advance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to minimize

 0.1. Size:1175K  cn agmsemi
 agm60p14ap.pdf pdf_icon

AGM60P14A

AGM60P14AP General DescriptionThe AGM60P14AP combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications. Features-60V 18m -52A Advance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to m

 6.1. Size:904K  cn agmsemi
 agm60p14d.pdf pdf_icon

AGM60P14A

AGM60P14D General DescriptionProduct SummaryThe AGM60P14D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-60V 18m -52Aprotectionapplications.TO-252 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

 7.1. Size:1942K  cn agmsemi
 agm60p100a.pdf pdf_icon

AGM60P14A

AGM60P100ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

MOSTRAR MÁS

Otros transistores... AGM609AP , AGM609C , AGM609D , AGM609F , AGM609MNA , AGM609S , AGM60P06S , AGM60P100A , RU7088R , AGM60P14AP , AGM60P14D , AGM60P20AP , AGM60P20D , AGM60P20R , , , .

History: AGM60P20D

 

 
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