AGM40P65AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM40P65APTypical Characteristics-VDS, - Drain -Source Voltage (V) Tj - Junction Temperature (C)Fig1. Typical Output Characteristics Fig2. -V Gate -Source Voltage Vs. TjGS(TH)-VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C)Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj-VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Voltage (V)

AGM40P65E General DescriptionProduct SummaryThe AGM40P65E combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.-40V 70m -5A FeaturesAdvance high cell density Trench technologySOT-23-3 Pin ConfigurationLow R to mi

AGM40P25ATable 2. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -40 ---- VZero Gate Voltage Drain Current V =-40V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =20V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =V

AGM40P30D General DescriptionThe AGM40P30D combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switchprotection applications.-40V 25m -30A FeaturesTO-252 Pin Configuration Advance high cell density Trench technologyLow R to minimize

AGM40P35A General DescriptionProduct SummaryThe AGM40P35A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-40V 11m -60Aprotection applications.PDFN5*6 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

AGM40P55AP General DescriptionProduct SummaryThe AGM40P55AP combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications. -40V 8.9m -50A FeaturesPDFN3.3*3.3 Pin Configuration Advance high cell density Trench technologyLow R to min

AGM40P100HTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -40 -- -- VGS DZero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM40P26E General DescriptionProduct SummaryThe AGM40P26E combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-40V 36m -5.8Aprotection applications.SOT23-3 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

AGM40P55D General DescriptionProduct SummaryThe AGM40P55D combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications. -40V 8.9m -50A FeaturesTO-252 Pin Configuration Advance high cell density Trench technologyLow R to minimize c

AGM40P13S General DescriptionProduct SummaryThe AGM40P13S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-40V 13m -8Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize cond

AGM40P30AP General DescriptionThe AGM40P30AP combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switchprotection applications.-40V 26m -33A FeaturesPDFN3.3*3.3 Pin Configuration Advance high cell density Trench technologyLow R to mi

AGM40P26APTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -40 -- -- VGS DZero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM40P75D General DescriptionThe AGM40P75D combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.-40V 7.0m -70A Features Advance high cell density Trench technologyTO-252 Pin ConfigurationLow R to minimize

AGM40P35AP General DescriptionProduct SummaryThe AGM40P35AP combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.-40V 11m -35A Features Advance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to mini

AGM40P75A General DescriptionProduct SummaryThe AGM40P75A combines advanced trenchtoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.-40V 7.0m -70A FeaturesPDFN5*6 Pin Configuration Advance high cell density Trench technologyLow R to minimize

AGM40P150CTable 2. P-Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250A -40 ---- VZero Gate Voltage Drain Current V =-40V,V =0V -1DS GSI -- -- ADSSGate-Body Leakage Current V =40V,V =0V 100GS DSI -- -- nAGSSV Gate Threshold Voltage V =

AGM40P35D General DescriptionProduct SummaryThe AGM40P35D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and battery protectionapplications.-40V 11m -60A Features Advance high cell density Trench technologyTO-252 Pin ConfigurationLow R to minimize co

AGM40P30ATypical Characteristics -VDS,- Drain -Source Voltage (V) Tj - Junction Temperature (C) Fig1. Typical Output Characteristics Fig2. -VGS(TH) Gate -Source Voltage Vs.Tj -VGS, -Gate -Source Voltage (V) Tj - Junction Temperature (C) Fig3. Typical Transfer Characteristics Fig4. Normalized On-Resistance Vs. Tj -VSD, -Source-Drain Voltage (V) -VDS, -Drain -Source Voltage (V

AGM40P55ATypical Characteristics80 80VGS = -10V VGS = -3.5V VDS= -5VVGS = -4.5V 60604040VGS = -3V 2020VGS = -2.5V 000 Drain-source voltage -VDS 4 51 2 30 1 2 3(V) Gate-source voltage -VGS (V)4Figure 1. Output Characteristics Figure 2. Transfer Characteristics1080ID= -16A604012000.10 3 6 9 120.2 0.4 0.6 0.8 1.0 1.2Gate-sourc

AGM40P100A Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.69AGM40P100AFigure 7. Gate Charge Waveforms Figure 8. CapacitanceFigure 9. Body-

AGM40P100CTable 3. Electrical Characteristics (Tj=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -40 -- -- VGS DZero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM40P35A-KU General DescriptionThe AGM40P35A-KU combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)This device is ideal for load switch and battery protectionBVDSS RDSON IDapplications.-40V 15m -60A Features Advance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to min

AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.7AGM40P25APTypical Electrical And Thermal Characteristics (Curves) Figure 7. Gat

AGM40P26S General DescriptionProduct SummaryThe AGM40P26S combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-40V 32m -6.0Aprotection applications.SOP8 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize co