AGM603C Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM603C  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 140 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6.7 nS

Cossⓘ - Capacitancia de salida: 883 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0038 Ohm

Encapsulados: TO220

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AGM603C datasheet

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AGM603C

AGM603C 1000 10 V 5 V 6 V VDS= 10 V 400 7 V Tj = 25 4.5 V 100 300 4 V 10 200 3.5 V 1 100 3 V VGS= 2.5 V 0.1 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-source voltage (V) VGS, Gate-source voltage(V) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 10.0 105 f = 100 kHz ID = 25 A VGS = 0 V VDS = 30 V 104 7.5 Ciss 103 5.0 C

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 agm6035f.pdf pdf_icon

AGM603C

AGM6035F Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =2

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AGM603C

AGM603F 1000 10 V 5 V 6 V VDS= 10 V 400 7 V Tj = 25 4.5 V 100 300 4 V 10 200 3.5 V 1 100 3 V VGS= 2.5 V 0.1 0 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 9 10 VDS, Drain-source voltage (V) VGS, Gate-source voltage(V) Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 10.0 105 f = 100 kHz ID = 25 A VGS = 0 V VDS = 30 V 104 7.5 Ciss 103 5.0 C

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AGM603C

AGM6035A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =2

MOSTRAR MÁS

Otros transistores... AGM40P55D, AGM40P65AP, AGM40P65E, AGM40P75A, AGM40P75D, AGM602C, AGM6035A, AGM6035F, IRFP260N, AGM603D, AGM603F, AGM605A, AGM605C, AGM605F, AGM605Q, AGM606S, AGM6070A