AGM605A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM605A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 147 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0056 Ohm

Encapsulados: PDFN5X6

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AGM605A datasheet

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 agm605a.pdf pdf_icon

AGM605A

AGM605A General Description Product Summary The AGM605A combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 4.4m 80A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to minimiz

 8.1. Size:869K  cn agmsemi
 agm605f.pdf pdf_icon

AGM605A

AGM605F General Description Product Summary The AGM605F combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 4.5m 80A Features Advance high cell density Trench technology TO-220F Pin Configuration Low R to minimize

 8.2. Size:1166K  cn agmsemi
 agm605c.pdf pdf_icon

AGM605A

AGM605C General Description Product Summary The AGM605C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 4.5m 80A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize

 8.3. Size:1208K  cn agmsemi
 agm605q.pdf pdf_icon

AGM605A

AGM605Q Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =25

MOSTRAR MÁS

Otros transistores... AGM40P75A, AGM40P75D, AGM602C, AGM6035A, AGM6035F, AGM603C, AGM603D, AGM603F, IRF3710, AGM605C, AGM605F, AGM605Q, AGM606S, AGM6070A, AGM6080C, AGM6080D, AGM608C