AGM605Q MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AGM605Q Datasheet (PDF)

..1. Size:1208K cn agmsemi
agm605q.pdf pdf_icon

AGM605QTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =25

8.1. Size:869K cn agmsemi
agm605f.pdf pdf_icon

AGM605F General DescriptionProduct SummaryThe AGM605F combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.5m80A FeaturesAdvance high cell density Trench technologyTO-220F Pin Configuration Low R to minimize

8.2. Size:1885K cn agmsemi
agm605a.pdf pdf_icon

AGM605A General DescriptionProduct SummaryThe AGM605A combines advanced trenchMOSFET to providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.4m80A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to minimiz

8.3. Size:1166K cn agmsemi
agm605c.pdf pdf_icon

AGM605C General DescriptionProduct SummaryThe AGM605C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.5m80A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimize

Otros transistores... AGM6035A , AGM6035F , AGM603C , AGM603D , AGM603F , AGM605A , AGM605C , AGM605F , IRFB4115 , AGM606S , AGM6070A , AGM6080C , AGM6080D , AGM608C , , , .