AGM412MPA Datasheet. Equivalente

 ..1. Size:1702K  cn agmsemi
 agm412mpa.pdf

AGM412MPA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

 7.1. Size:950K  cn agmsemi
 agm412map.pdf

AGM412MAP General Description Product Summary The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 40V 10m 22A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi

 8.1. Size:943K  cn agmsemi
 agm412d.pdf

AGM412D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =

 8.2. Size:1048K  cn agmsemi
 agm412s.pdf

AGM412S General Description The AGM412S combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 40V 11m 13A Advance high cell density Trench technology SOP-8 Pin Configuration Low R to minimize c