AGM412S Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM412S  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 103 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.014 Ohm

Encapsulados: SOP8

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AGM412S datasheet

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 agm412s.pdf pdf_icon

AGM412S

AGM412S General Description The AGM412S combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 40V 11m 13A Advance high cell density Trench technology SOP-8 Pin Configuration Low R to minimize c

 8.1. Size:943K  cn agmsemi
 agm412d.pdf pdf_icon

AGM412S

AGM412D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =

 8.2. Size:1702K  cn agmsemi
 agm412mpa.pdf pdf_icon

AGM412S

AGM412MPA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V

 8.3. Size:950K  cn agmsemi
 agm412map.pdf pdf_icon

AGM412S

AGM412MAP General Description Product Summary The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 40V 10m 22A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi

MOSTRAR MÁS

Otros transistores... AGM606S, AGM6070A, AGM6080C, AGM6080D, AGM608C, AGM412D, AGM412MAP, AGM412MPA, 2SK3878, AGM414MBP, AGM418M, AGM418MBP, AGM420MA, AGM420MAP, AGM420MBA, AGM420MC, AGM420MD