AGM425ME Datasheet. Equivalente

 ..1. Size:1376K  cn agmsemi
 agm425me.pdf

AGM425ME General Description Product Summary The AGM425ME combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID protection This device is ideal for load switch and battery 40V 25m 6.6A applications. Features -40V 65.5m -3.3A Advance high cell density Trench technology SOT23-6L Pin Configuration

 7.1. Size:1686K  cn agmsemi
 agm425md.pdf

AGM425MD N-Channel Typical Characteristics 40 12 ID=12A VGS=10V 10 35 VGS=7V 8 VGS=5V 30 6 VGS=4.5V 4 VGS=3V 25 2 20 0 2 4 6 8 10 0 0.5 1 1.5 2 VDS Drain-to-Source Voltage (V) VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 10 12 VDS=20V ID=12A 8 8 6 TJ=150 TJ=25 4 4 2 0 0 0.00 0.25 0.50 0.75 1.00 0 4 8 12 16 QG , T

 7.2. Size:2061K  cn agmsemi
 agm425mc.pdf

AGM425MC General Description Product Summary The AGM425MC combines advanced trench MOSFET technology with a low resistance to provide extremely low R . BVDSS RDSON ID package DS(ON) This device is ideal for load switch and battery 40V 15m 7.6A protection applications. -40V 32m -6.5A Features SOP8 Pin Configuration Advance high cell density Trench technology R to mi

 7.3. Size:2077K  cn agmsemi
 agm425ma.pdf

AGM425MA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo

 7.4. Size:1682K  cn agmsemi
 agm425m.pdf