AGM55N15D Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AGM55N15D  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.5 nS

Cossⓘ - Capacitancia de salida: 171 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm

Encapsulados: TO252

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AGM55N15D datasheet

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AGM55N15D

AGM55N15D Typical Electrical & Thermal Characteristics 20 20 VGS = 10V VDS = 5.0V VGS = 8.0V VGS = 7.0V 16 15 VGS = 6.0V TJ = 125 C 12 10 VGS = 5.5V 8 TJ = 25 C 5 VGS = 5.0V 4 VGS = 4.6V 0 0 0 0.5 1 1.5 2 2.5 3 02468 VDS (V) VGS (V) Figure 1 Saturation Characteristics Figure 2 Transfer Characteristics 80 2.5 VGS = 10V 70 2 ID = 9.0A 60 1.5 VGS = 10V 1 50 0.5

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AGM55N15D

AGM55N15A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D DSS Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage

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AGM55N15D

AGM55P10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -100 -- -- V GS D Zero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltag

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AGM55N15D

AGM55P10D General Description Product Summary The AGM55P10D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -100V 52m -30A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to min

MOSTRAR MÁS

Otros transistores... AGM425MA, AGM425MC, AGM425MD, AGM425ME, AGM435E, AGM500P20D, AGM502, AGM55N15A, IRFB3607, AGM55P10A, AGM55P10D, AGM55P10S, AGM6014A, AGM6014AP, AGM6018A, AGM601LL, AP0903G