ZXMN6A07Z Todos los transistores

 ..1. Size:530K  diodes
 zxmn6a07z.pdf

ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 2.5 60 0.350 @ VGS= 4.5V 2.1 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 0.1. Size:527K  zetex
 zxmn6a07zta.pdf

ZXMN6A07Z 60V SOT89 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 2.5 60 0.350 @ VGS= 4.5V 2.1 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 0.2. Size:852K  cn vbsemi
 zxmn6a07zta.pdf

ZXMN6A07ZTA www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.076 at VGS = 4.5 V 7.1 RoHS 29 nC COMPLIANT 60 APPLICATIONS 0.088 at VGS = 10 V 6.7 Load Switches for Portable Devices D D G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwi

 6.1. Size:531K  diodes
 zxmn6a07f.pdf

ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 1.4 60 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 6.2. Size:527K  zetex
 zxmn6a07fta.pdf

ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 1.4 60 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 6.3. Size:527K  zetex
 zxmn6a07ftc.pdf

ZXMN6A07F 60V SOT23 N-channel enhancement mode mosfet Summary V(BR)DSS RDS(on) ( ) ID (A) 0.250 @ VGS= 10V 1.4 60 0.350 @ VGS= 4.5V 1.2 Description D This new generation trench MOSFET from Zetex utilizes a unique structure combining the benefits of low on-state resistance with fast switching speed. G Features S Low on-resistance Fast switching speed Low threshold S

 6.4. Size:1319K  cn vbsemi
 zxmn6a07f.pdf

ZXMN6A07F www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23) G