AP0903G Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP0903G  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 30 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 225 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm

Encapsulados: PMPAK5X6

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AP0903G datasheet

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 ap0903g.pdf pdf_icon

AP0903G

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 ap0903gm-hf.pdf pdf_icon

AP0903G

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 0.2. Size:95K  ape
 ap0903gyt-hf.pdf pdf_icon

AP0903G

AP0903GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16A G RoHS Compliant & Halogen-Free S D D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 0.3. Size:168K  ape
 ap0903gm.pdf pdf_icon

AP0903G

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP0903 series are from

MOSTRAR MÁS

Otros transistores... AGM55N15D, AGM55P10A, AGM55P10D, AGM55P10S, AGM6014A, AGM6014AP, AGM6018A, AGM601LL, TK10A60D, AP0903GD, AP1002, AP120N03, AP120N04K, AP12N10S, AP1310, AP1310K, AP150N03G