ZXMN6A09DN8 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ZXMN6A09DN8

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5.6 A

CARACTERÍSTICAS ELÉCTRICAS

Cossⓘ - Capacitancia de salida: 1407 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: SO8

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ZXMN6A09DN8 datasheet

 ..1. Size:584K  diodes
 zxmn6a09dn8.pdf pdf_icon

ZXMN6A09DN8

ZXMN6A09DN8 60V SO8 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 5.6 60 0.060 @ VGS= 4.5V 4.6 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

 6.1. Size:631K  diodes
 zxmn6a09ktc.pdf pdf_icon

ZXMN6A09DN8

 6.2. Size:624K  diodes
 zxmn6a09k.pdf pdf_icon

ZXMN6A09DN8

ZXMN6A09K 60V N-channel enhancement mode MOSFET in DPAK Summary V(BR)DSS=60V RDS(on)=0.040 ; ID=12.2A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features D Low on-resistan

 6.3. Size:558K  diodes
 zxmn6a09g.pdf pdf_icon

ZXMN6A09DN8

ZXMN6A09G 60V SOT223 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 0.040 @ VGS= 10V 7.5 60 0.060 @ VGS= 4.5V 6.2 Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications.

MOSTRAR MÁS

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