AP60N04Q Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP60N04Q  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9.6 nS

Cossⓘ - Capacitancia de salida: 132 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm

Encapsulados: PDFN3X3-8L

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AP60N04Q datasheet

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AP60N04Q

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AP60N04Q

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 7.2. Size:897K  cn apm
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AP60N04Q

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

 7.3. Size:1454K  cn apm
 ap60n04nf.pdf pdf_icon

AP60N04Q

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R

MOSTRAR MÁS

Otros transistores... AP50P20K, AP50P20Q, AP5N10M, AP5N10S, AP5N20K, AP5N50K, AP6007S, AP6009S, 20N50, AP60P20K, AP6242, AP6800, AP6802, AP6900, AP70N100K, AP70P03K, AP75N04K