AP80P04K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP80P04K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 130 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 42 nS

Cossⓘ - Capacitancia de salida: 700 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: TO252

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AP80P04K datasheet

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AP80P04K

 7.1. Size:1788K  cn apm
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AP80P04K

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

 7.2. Size:1735K  cn apm
ap80p04nf.pdf pdf_icon

AP80P04K

AP80P04NF -40V P-Channel Enhancement Mode MOSFET Description The AP80P04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS D R

 8.1. Size:1641K  cn apm
ap80p06d.pdf pdf_icon

AP80P04K

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R

Otros transistores... AP6900, AP70N100K, AP70P03K, AP75N04K, AP7N10K, AP80N06DH, AP80N06H, AP80N06T, 7N60, AP85N04G, AP85N04K, AP85N04Q, AP85P04G, AP90N03GD, AP90N04G, AP90N04K, AP90N04Q