AP90N03GD MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AP90N03GD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP90N03GD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0058 Ohm
   Paquete / Cubierta: PDFN5X6-8L

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AP90N03GD datasheet

..1. Size:606K allpower
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8.4. Size:1234K cn apm
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AP90N02D 20V N-Channel Enhancement Mode MOSFET Description The AP90N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90A DS D R ... See More ⇒

8.5. Size:2408K cn apm
ap90n06d.pdf pdf_icon

AP90N06D 60V N-Channel Enhancement Mode MOSFET Description The AP90N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒

8.6. Size:1744K cn apm
ap90n08nf.pdf pdf_icon

AP90N08NF 85V N-Channel Enhancement Mode MOSFET Description The AP90N08NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 85V I =95A DS D R ... See More ⇒

8.7. Size:1413K cn apm
ap90n06p ap90n06t.pdf pdf_icon

AP90N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP90N06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒

8.8. Size:1327K cn apm
ap90n06f.pdf pdf_icon

AP90N06F 60V N-Channel Enhancement Mode MOSFET Description The AP90N06F uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =90A DS D R ... See More ⇒

8.9. Size:1655K cn apm
ap90n02nf.pdf pdf_icon

AP90N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP90N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =90 A DS D R ... See More ⇒

Otros transistores... AP80N06DH , AP80N06H , AP80N06T , AP80P04K , AP85N04G , AP85N04K , AP85N04Q , AP85P04G , IRF9640 , , , , , , , , .