AP9N20K Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP9N20K  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 74 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 87 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO252

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AP9N20K datasheet

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AP9N20K

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AP9N20K

AP9N20P 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

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AP9N20K

AP9N20D 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

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AP9N20K

AP9N20Y 200V N-Channel Enhancement Mode MOSFET Description The AP9N20Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

MOSTRAR MÁS

Otros transistores... AP85N04Q, AP85P04G, AP90N03GD, AP90N04G, AP90N04K, AP90N04Q, AP90P03K, AP9565K, IRFB3206, APC60R030WMF, APC65R190FM, APG011N03G, APG011N04G, APG013N04G, APG020N01GD, APG022N06G, APG024N04G