AOB29S50L Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AOB29S50L 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 357 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 29 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 39 nS
Cossⓘ - Capacitancia de salida: 88 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
Encapsulados: TO263
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AOB29S50L datasheet
..1. Size:441K 1
aot29s50l aob29s50l aotf29s50l aotf29s50.pdf 
AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl
..2. Size:992K aosemi
aot29s50l aob29s50l aotf29s50l aotf29s50.pdf
AOT29S50L/AOB29S50L/AOTF29S50L/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50L & AOB29S50L & AOTF29S50L & AOTF29S50 have been fabricated using the advanced IDM 120A MOSTM high voltage process that is designed to deliver high RDS(ON),max 0.15 levels of performance and robustness in switching Qg,typ 26.6nC appl
6.1. Size:324K aosemi
aob29s50.pdf
AOT29S50/AOB29S50/AOTF29S50 TM 500V 29A MOS Power Transistor General Description Product Summary VDS @ Tj,max 600V The AOT29S50 & AOB29S50 & AOTF29S50 have been fabricated using the advanced MOSTM high voltage IDM 120A process that is designed to deliver high levels of RDS(ON),max 0.15 performance and robustness in switching applications. Qg,typ 26.6nC By provi
6.2. Size:255K inchange semiconductor
aob29s50.pdf
isc N-Channel MOSFET Transistor AOB29S50 FEATURES Drain Current I = 29A@ T =25 D C Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.15 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp
9.1. Size:381K aosemi
aob2910l aot2910l aotf2910l.pdf
AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.2. Size:341K aosemi
aob290l.pdf
AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V)
9.3. Size:362K aosemi
aob2904.pdf
AOT2904/AOB2904 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 120A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:434K aosemi
aot2910l aob2910l aotf2910l.pdf
AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.5. Size:341K aosemi
aot290l aob290l.pdf
AOT290L/AOB290L 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOT290L/AOB290L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 140A efficient high frequency switching performance. Power RDS(ON) (at VGS=10V)
9.6. Size:434K aosemi
aob2910l.pdf
AOT2910L/AOB2910L/AOTF2910L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2910L & AOB2910L & AOTF2910L uses trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 30A / 22A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.7. Size:434K aosemi
aob298l.pdf
AOT298L/AOB298L/AOTF298L 100V N-Channel MOSFET General Description Product Summary VDS The AOT298L & AOB298L & AOTF298L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 58A/33A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.8. Size:372K aosemi
aob2906.pdf
AOT2906/AOB2906 TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 122A Low RDS(ON) Low Gate Charger RDS(ON) (at VGS=10V)
9.9. Size:281K aosemi
aob296l.pdf
AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS The AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.10. Size:278K aosemi
aob292l.pdf
AOT292L/AOB292L 100V N-Channel MOSFET General Description Product Summary VDS The AOT292L/AOB292L uses Trench MOSFET 100V ID (at VGS=10V) 105A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.11. Size:403K aosemi
aot296l aob296l.pdf
AOT296L/AOB296L 100V N-Channel MOSFET General Description Product Summary VDS The AOT296L/AOB296L uses Trench MOSFET 100V ID (at VGS=10V) 70A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)
9.12. Size:479K aosemi
aot292l aob292l aotf292l.pdf
AOT292L/AOB292L/AOTF292L TM 100V N-Channel AlphaSGT General Description Product Summary VDS 100V Trench Power AlphaSGTTM technology ID (at VGS=10V) 105A Low RDS(ON) RoHS and Halogen Free Compliant RDS(ON) (at VGS=10V)
9.13. Size:381K aosemi
aob2918l.pdf
AOT2918L/AOB2918L/AOTF2918L 100V N-Channel MOSFET General Description Product Summary VDS The AOT2918L & AOB2918L & AOTF2918L uses Trench 100V MOSFET technology that is uniquely optimized to provide ID (at VGS=10V) 90A the most efficient high frequency switching performance. RDS(ON) (at VGS=10V)
9.14. Size:204K inchange semiconductor
aob290l.pdf
INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOB290L FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM
9.15. Size:238K inchange semiconductor
aob2904.pdf
isc N-Channel MOSFET Transistor AOB2904 FEATURES Drain Current I = 120A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.2m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
9.16. Size:238K inchange semiconductor
aob2910l.pdf
isc N-Channel MOSFET Transistor AOB2910L FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 23.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and ge
9.17. Size:232K inchange semiconductor
aob298l.pdf
isc N-Channel MOSFET Transistor AOB298L DESCRIPTION Drain Current I = 58A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS . Be ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlig
9.18. Size:238K inchange semiconductor
aob2906.pdf
isc N-Channel MOSFET Transistor AOB2906 FEATURES Drain Current I = 122A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 5.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
9.19. Size:238K inchange semiconductor
aob296l.pdf
isc N-Channel MOSFET Transistor AOB296L FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 9.7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gene
9.20. Size:237K inchange semiconductor
aob292l.pdf
isc N-Channel MOSFET Transistor AOB292L FEATURES Drain Current I = 105A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.1m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gen
9.21. Size:238K inchange semiconductor
aob2918l.pdf
isc N-Channel MOSFET Transistor AOB2918L FEATURES Drain Current I = 90A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R = 7m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Be suitable for synchronous rectification for server and gener
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