AON5802 Todos los transistores

 ..1. Size:120K  aosemi
 aon5802.pdf

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is RDS(ON)

 0.1. Size:117K  aosemi
 aon5802a.pdf

AON5802A, AON5802AL Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802A uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

 0.2. Size:269K  aosemi
 aon5802b.pdf

AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS The AON5802B uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

 0.3. Size:414K  aosemi
 aon5802bg.pdf

AON5802BG 30V Dual N-Channel MOSFET General Description Product Summary VDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)