ASA60R090EFDA Todos los transistores

 

ASA60R090EFDA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ASA60R090EFDA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 34 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 4.4 nS

Cossⓘ - Capacitancia de salida: 298.1 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.09 Ohm

Encapsulados: TO220F

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ASA60R090EFDA datasheet

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asa60r090efda asw60r090efda.pdf pdf_icon

ASA60R090EFDA

 2.1. Size:1044K  cn anhi
asa60r090efd asw60r090efd.pdf pdf_icon

ASA60R090EFDA

ASA60R090EFD, ASW60R090E ASW60R090EFD MOSFET Silicon N-Channel MOS 1. Applications Soft Switching Boost PFC switch,Half bridge or Asymmetric half bridge or Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. phase-shift-bridge(ZVS),LLC Application bridge(ZVS),LLC Application-Server Power, Telecom Power,EV Charging,Solar inverter So

 8.1. Size:816K  cn anhi
asa60r150e asw60r150e asb60r150e.pdf pdf_icon

ASA60R090EFDA

ASA60R150E, ASW60R150E, ASB60R150E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor, LCD & PDP TV,LED Lighting, Server power, Telecom power, and UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.1

 8.2. Size:1049K  cn anhi
asa60r170e.pdf pdf_icon

ASA60R090EFDA

ASA60R170E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. PC power, Adaptor, LCD & PDP TV, LED Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.139 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 t

Otros transistores... AS2310A , 2N7002EY , AS6004 , ADG120N080G2 , ADQ120N080G2 , ADW120N080G2 , ASA50R130E , ASA60R090EFD , IRFB31N20D , ASA60R150E , ASA60R170E , ASA60R210E , ASA60R280E , ASA60R330E , ASA65R120EFD , ASA65R220E , ASA65R270E .

 

 

 


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