ASA65R280E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASA65R280E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.5 nS
Cossⓘ - Capacitancia de salida: 40.67 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.28 Ohm
Encapsulados: TO220F
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ASA65R280E datasheet
asa65r280e asd65r280e asm65r280e.pdf
ASA65R280E, ASD65R280E, ASM65R280E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 240m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Val
asd65r270e asa65r270e.pdf
ASD65R270E, ASA65R270E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 236m (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit VD
asa65r220e asb65r220e.pdf
ASA65R220E, ASB65R220E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback ortwo-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor, LCD & PDP TV, LED Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.19 (typ.)
asw65r120efd asa65r120efd asr65r120efd.pdf
ASW65R120EFD, ASA65R120EFD, ASR65R120EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.105 (typ.) Easy to control Gate switching E
Otros transistores... ASA60R150E , ASA60R170E , ASA60R210E , ASA60R280E , ASA60R330E , ASA65R120EFD , ASA65R220E , ASA65R270E , IRFB7545 , ASA65R300E , ASA65R350E , ASA65R550E , ASA65R850E , ASA70R240E , ASA70R380E , ASA70R600E , ASA70R950E .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASD80R750E | ASD70R950E | ASD70R600E | ASD70R380E | ASD65R850E | ASD65R550E | ASD65R350E | ASD65R300E | ASD65R280E | ASD65R270E | ASD60R330E | ASD60R280E | ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E
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