ASA70R240E MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASA70R240E
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 33 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 750 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21.6 nS
Cossⓘ - Capacitancia de salida: 134 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.24 Ohm
Encapsulados: TO220F
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ASA70R240E datasheet
asa70r240e.pdf
ASA70R240E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.211 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 750 V DS @
asa70r950e asd70r950e ase70r950e.pdf
ASA70R950E,ASD70R950E,ASE70R950E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback. PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.870 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key Performance Parameters Parameter Value Unit V 750 V DS @ T j,max R 950 DS(o
asa70r600e.pdf
ASA70R600E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PD Adaptor,LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0.540 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V Table 1 Key PerformanceParameters Parameter Value Unit V 750 V DS @ T j,max
asa70r600e asu70r600e asd70r600e.pdf
ASA70R600E ASU70R600E ASD70R600E ASU70R600E ASD70R600E MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward transistor forward topologies. PD Adaptor,LCD & PDP TV and LED LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 0. RDS(ON) = 0.540 (typ.) Easy to control Gate switching Enhancement mode Vth = 2.8 to 4.2 V E
Otros transistores... ASA65R120EFD , ASA65R220E , ASA65R270E , ASA65R280E , ASA65R300E , ASA65R350E , ASA65R550E , ASA65R850E , MMIS60R580P , ASA70R380E , ASA70R600E , ASA70R950E , ASA80R290E , ASA80R750E , ASA80R900E , ASB60R150E , ASB65R120EFD .
History: ASA70R600E
History: ASA70R600E
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: ASB80R750E | ASB70R380E | ASB65R300E | ASB65R220E | ASB65R120EFD | ASB60R150E | ASA80R900E | ASA80R750E | ASA80R290E | ASA70R950E | ASA70R600E | ASA70R380E | ASA70R240E | ASA65R850E | ASA65R550E | ASA65R350E
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