ASB65R120EFD Todos los transistores

 

ASB65R120EFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ASB65R120EFD

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 277.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 30 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 31.3 nS

Cossⓘ - Capacitancia de salida: 89 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm

Encapsulados: TO263

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ASB65R120EFD datasheet

 ..1. Size:1113K  cn anhi
 asw65r120efd asa65r120efd asr65r120efd asb65r120efd.pdf pdf_icon

ASB65R120EFD

ASW65R120EFD, ASA65R120EFD, ASR65R120EFD, ASB65R120EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge topologies. Server power, Telecom power, EV charging, Solar inverter, UPS Application. 2. Features Low drain-source on-resistance RDS(ON) = 0.105 (typ.) Easy to control Ga

 8.1. Size:855K  cn anhi
 asa65r300e asd65r300e asb65r300e.pdf pdf_icon

ASB65R120EFD

ASA65R300E, ASD65R300E,ASB65R300E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback or two-transistor forward, HB or AHB or LLC topologies. For PC power, PD Adaptor, LCD & PDP TV, LED Lighting, Server power, UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.278 (typ.) Easy to control Gate switching Enhancement mode V

 8.2. Size:791K  cn anhi
 asa65r220e asb65r220e.pdf pdf_icon

ASB65R120EFD

ASA65R220E, ASB65R220E MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch, single-ended flyback ortwo-transistor forward, Half bridge or Asymmetric half bridge or Series resonance half bridge topologies. PC power, Adaptor, LCD & PDP TV, LED Lighting, Server power, Telecom power and UPS application. 2. Features Low drain-source on-resistance RDS(ON) = 0.19 (typ.)

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