ASW65R041EFDA Todos los transistores

 

ASW65R041EFDA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: ASW65R041EFDA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 500 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28.4 nS

Cossⓘ - Capacitancia de salida: 436 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm

Encapsulados: TO247

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ASW65R041EFDA datasheet

 ..1. Size:1502K  cn anhi
 asw65r041efda.pdf pdf_icon

ASW65R041EFDA

ASW65R041EFDA MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC bridge(ZVS),LLC Application-Server Power, Telecom Power,EV Charging, Solar inverter Solar inverter. 2. Features Low dra

 4.1. Size:1572K  cn anhi
 asw65r041e.pdf pdf_icon

ASW65R041EFDA

ASW65R041E MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC bridge(ZVS),LLC Application-Server Power, Telecom Power, EV Charging, Solar inverter. Solar inverter. 2. Features Low drai

 6.1. Size:1257K  cn anhi
 asw65r046efd asq65r046efd asr65r046efd.pdf pdf_icon

ASW65R041EFDA

ASW65R046EFD, ASQ65R046EFD, ASR65R046EFD MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 39m (typ.) Easy to control Gate switching Enhancement mode Vth = 3.2 to 4.5 V Table 1 Key Performance Parameters Paramete

 7.1. Size:844K  cn anhi
 asw65r095efd.pdf pdf_icon

ASW65R041EFDA

ASW65R095EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch,Half bridge or Asymmetric half bridge or Series Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge and full bridge topologies. Server power,Telecom power,EV charging, EV charging,Solar inverter,UPS Application. 2. Features Low drain-source on-resistance RDS(ON) resist

MOSTRAR MÁS

Otros transistores... ASU65R550E , ASU65R850E , ASU70R600E , ASW60R029EFD , ASW60R090EFD , ASW60R090EFDA , ASW60R150E , ASW65R041E , IRF9540N , ASW65R046EFD , ASW65R095EFD , ASW65R110E , ASW65R120EFD , ASW80R290E , AUA039N10 , AUA056N08BGL , AUA060N08AG .

 

 

 

 

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