ASW65R095EFD MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASW65R095EFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 391 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 47 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 26.8 nS
Cossⓘ - Capacitancia de salida: 482 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.095 Ohm
Encapsulados: TO247
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ASW65R095EFD datasheet
asw65r095efd.pdf
ASW65R095EFD MOSFET Silicon N-Channel MOS 1. Applications Boost PFC switch,Half bridge or Asymmetric half bridge or Series Half bridge or Asymmetric half bridge or Series resonance half bridge and full bridge and full bridge topologies. Server power,Telecom power,EV charging, EV charging,Solar inverter,UPS Application. 2. Features Low drain-source on-resistance RDS(ON) resist
asw65r041e.pdf
ASW65R041E MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC bridge(ZVS),LLC Application-Server Power, Telecom Power, EV Charging, Solar inverter. Solar inverter. 2. Features Low drai
asw65r041efda.pdf
ASW65R041EFDA MOSFET Silicon N-Channel MOS 1. Applications For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and For Soft Switching Boost PFC switch, HB or AHB or LLC half bridge and full bridge topologies. Such as phase-shift-bridge(ZVS),LLC bridge(ZVS),LLC Application-Server Power, Telecom Power,EV Charging, Solar inverter Solar inverter. 2. Features Low dra
asw65r046efd asq65r046efd asr65r046efd.pdf
ASW65R046EFD, ASQ65R046EFD, ASR65R046EFD MOSFET Silicon N-Channel MOS 1. Applications Single-ended flyback or two-transistor forward topologies. PC power, PD Adaptor, LCD & PDP TV and LED lighting. 2. Features Low drain-source on-resistance RDS(ON) = 39m (typ.) Easy to control Gate switching Enhancement mode Vth = 3.2 to 4.5 V Table 1 Key Performance Parameters Paramete
Otros transistores... ASU70R600E , ASW60R029EFD , ASW60R090EFD , ASW60R090EFDA , ASW60R150E , ASW65R041E , ASW65R041EFDA , ASW65R046EFD , IRLB4132 , ASW65R110E , ASW65R120EFD , ASW80R290E , AUA039N10 , AUA056N08BGL , AUA060N08AG , AUA062N08BG , AUB026N085 .
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
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