HYG053N10NS1P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: HYG053N10NS1P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 187.5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 120 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 93 nS
Cossⓘ - Capacitancia de salida: 1410 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Encapsulados: TO220
Búsqueda de reemplazo de HYG053N10NS1P MOSFET
- Selecciónⓘ de transistores por parámetros
HYG053N10NS1P datasheet
hyg053n10ns1p hyg053n10ns1b.pdf
HYG053N10NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 100V/120A RDS(ON)=4.8 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Battery management N-Channel MOSFET
hyg055n08ns1c2.pdf
HYG055N08NS1C2 N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/85A D D D D D D D D RDS(ON)=4.8 m (typ.)@VGS = 10V 100% Avalanche Tested Reliable and Rugged Halogen-Free Devices Available (RoHS Compliant) S S S G G S S S Pin1 PPAK5*6 8L - Applications Switching application Power management for inverter systems Motor contr
hyg055n08ns1p hyg055n08ns1b.pdf
HYG055N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/120A RDS(ON)=5.3 m (typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D G Lead-Free and Green Devices Available S D G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N
hyg050n08ns1p hyg050n08ns1b.pdf
HYG050N08NS1P/B N-Channel Enhancement Mode MOSFET Feature Pin Description 80V/130A RDS(ON)= 4 m (typ.)@VGS = 10V 100% Avalanche Tested S Reliable and Rugged D G Lead-Free and Green Devices Available S D G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power management for inverter systems Motor control N-Chan
Otros transistores... AUP045N12, AUP052N085, AUP056N08BGL, AUP056N10, AUP060N055, QM3126M3, AP220N04P, AP220N04T, IRFZ48N, HYG053N10NS1B, AUP060N08AG, AUP062N08BG, AUP065N10, AUP074N10, AUR014N10, AUR020N085, AUR020N10
History: QM3126M3 | AP220N04T | AUR014N10
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Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUW033N08BG | AUW025N10 | AUR030N10 | AUR020N10 | AUR020N085 | AUR014N10 | AUP074N10 | AUP065N10 | AUP062N08BG | AUP060N08AG | HYG053N10NS1B | HYG053N10NS1P | AP220N04T | AP220N04P | QM3126M3 | AUP060N055
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