AP3N9R5MT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3N9R5MT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 22.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 37.8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 155 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: PMPAK5X6

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AP3N9R5MT datasheet

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AP3N9R5MT

AP3N9R5MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 9.5m Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N9R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible

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AP3N9R5MT

AP3N9R5H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 9.5m Fast Switching Characteristic ID 37.8A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N9R5 seriesare fromAdvanced Power innovated

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 ap3n9r5yt.pdf pdf_icon

AP3N9R5MT

AP3N9R5YT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Low RDS(ON) RDS(ON) 9.5m RoHS Compliant & Halogen-Free D G D D S D Description AP3N9R5 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on- S resistan

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