ZXMN15A27K Todos los transistores

 

ZXMN15A27K MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ZXMN15A27K
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 9.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 2.6 A

CARACTERÍSTICAS ELÉCTRICAS


   Cossⓘ - Capacitancia de salida: 169 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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ZXMN15A27K Datasheet (PDF)

 ..1. Size:664K  diodes
zxmn15a27k zxmn15a27ktc.pdf pdf_icon

ZXMN15A27K

A Product Line ofDiodes IncorporatedZXMN15A27K 150V N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) High avalanche energy pulse withstand capability TA = 25C Low input capacitance Low on-resistanc

 9.1. Size:174K  diodes
zxmn10a08e6ta zxmn10a08e6tc.pdf pdf_icon

ZXMN15A27K

A Product Line ofDiodes Incorporated ZXMN10A08E6100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low on-resistanceMax ID Fast switching speed V(BR)DSS Max RDS(on) TA = 25C Totally Lead-Free & Fully RoHS compliant (Note 1) (Note 5) Halogen and Antimony Free. Green Device (Note 2) 250m @ VGS = 10V 1.9A Qualified t

 9.2. Size:641K  diodes
zxmn10a11gtc zxmn10a11g zxmn10a11gta.pdf pdf_icon

ZXMN15A27K

A Product Line ofDiodes IncorporatedZXMN10A11G100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast switching speed ID V(BR)DSS RDS(on) Low gate drive TA = 25C Low input capacitance 350m @ VGS = 10V 2.4A Qualified to AEC-Q101 Standards for High Reliability 100V 450m @ VGS = 6.0V 2.1A Mechanical Data Case: SOT2

 9.3. Size:570K  diodes
zxmn10a11g.pdf pdf_icon

ZXMN15A27K

ZXMN10A11G Green 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Fast Switching Speed ID BVDSS RDS(on) Low Gate Drive TA = +25C Low Input Capacitance 350m @ VGS = 10V 2.4A Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 100V 450m @ VGS = 6.0V 2.1A Halogen and Antimony Free. Green Device (Note 3) Qualifie

Otros transistores... ZXMN10A08E6 , ZXMN10A08G , ZXMN10A09K , ZXMN10A11G , ZXMN10A11K , ZXMN10A25G , ZXMN10A25K , ZXMN10B08E6 , IRF9640 , ZXMN20B28K , DMG1013T , DMG1013UW , DMG1023UV , DMG2301U , DMG3415U , DMG3415UFY4 , DMG9933USD .

History: STF13N60M2 | SIHFD014 | STD4NK50ZD | PSMN5R6-100PS | IXTQ44P15T | CS7456 | SI7491DP

 

 
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