ZXMN20B28K MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ZXMN20B28K
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 10.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 2.3 A
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 358 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.78 Ohm
Encapsulados: TO252
DPAK
Búsqueda de reemplazo de ZXMN20B28K MOSFET
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ZXMN20B28K datasheet
..1. Size:651K diodes
zxmn20b28k zxmn20b28ktc.pdf 
A Product Line of Diodes Incorporated ZXMN20B28K 200V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) High avalanche energy pulse withstand capability TA = 25 C Low gate drive voltage (Logic level capable) 750m @ VGS = 10V 2.3A Low input capacitance 200V
9.1. Size:585K diodes
zxmn2b03e6.pdf
ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga
9.2. Size:514K diodes
zxmn2am832.pdf
OBSOLETE - PLEASE USE ZXMN2AMCTA ZXMN2AM832 MPPS Miniature Package Power Solutions DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ; ID= 3A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP(Micro Leaded Package) outline this dual 20V N channel Trench MOSFET utilizes a unique structure combining the benefits of Low on-resistance with fast swit
9.3. Size:391K diodes
zxmn2b01f.pdf
ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low gate
9.5. Size:179K diodes
zxmn2a04dn8.pdf
ZXMN2A04DN8 DUAL 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 20V; RDS(ON)= 0.025 ; ID= 7.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SO8 Low on-resista
9.6. Size:197K diodes
zxmn2a03e6.pdf
ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan
9.7. Size:414K diodes
zxmn2f30fh.pdf
ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC
9.9. Size:435K diodes
zxmn2b14fh.pdf
ZXMN2B14FH 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.055 @ VGS= 4.5V 4.3 0.075 @ VGS= 2.5V 3.7 20 0.100 @ VGS= 1.8V 3.2 Description This new generation of trench MOSFETs from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low
9.10. Size:407K diodes
zxmn2f34ma.pdf
ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low
9.11. Size:158K diodes
zxmn2a02n8.pdf
ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance
9.12. Size:247K diodes
zxmn2a02x8.pdf
ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance
9.13. Size:199K diodes
zxmn2a01e6.pdf
ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistance
9.14. Size:407K diodes
zxmn2f34fh.pdf
ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC-
9.15. Size:651K diodes
zxmn2amc.pdf
A Product Line of Diodes Incorporated ZXMN2AMC 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low profile package, for thin applications ID max Low Rthj-a, thermally efficient package V(BR)DSS RDS(on) max TA = 25 C 6mm2 footprint, 50% smaller than TSOP6 and SOT23-6 (Notes 4 & 7) Low on-resistance Fast switching speed
9.16. Size:102K tysemi
zxmn2b01f.pdf
Product specification ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from TY features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching spe
9.17. Size:86K tysemi
zxmn2a14f.pdf
Product specification ZXMN2A14F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS= 20V RDS(on)=0.06 ; ID= 4.1A DESCRIPTION This new generation of trench MOSFETs from Ty utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23 L
9.18. Size:109K tysemi
zxmn2f30fh.pdf
Product specification ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from TY features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications
9.19. Size:79K tysemi
zxmn2a01f.pdf
Product specification ZXMN2A01F 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 2.2A DESCRIPTION This new generation of trench MOSFETs from TY utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES SOT23
9.20. Size:106K tysemi
zxmn2f34fh.pdf
Product specification ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from TY features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S
9.21. Size:246K zetex
zxmn2a02x8ta.pdf
ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance
9.22. Size:198K zetex
zxmn2a01e6ta.pdf
ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistance
9.23. Size:424K zetex
zxmn2b14fhta.pdf
ZXMN2B14FH 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.055 @ VGS= 4.5V 4.3 0.075 @ VGS= 2.5V 3.7 20 0.100 @ VGS= 1.8V 3.2 Description This new generation of trench MOSFETs from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low
9.24. Size:154K zetex
zxmn2a02n8ta.pdf
ZXMN2A02N8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 10.2A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance
9.26. Size:404K zetex
zxmn2f34mata.pdf
ZXMN2F34MA 20V N-channel enhancement mode MOSFET in DFN322 Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 8.5 0.120 @ VGS= 2.5V Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. The 2mm x 2mm DFN package provides superior thermal performance versus alternative leaded devices Features D Low
9.27. Size:246K zetex
zxmn2a02x8tc.pdf
ZXMN2A02X8 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.02 ID = 7.8A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. MSOP8 FEATURES Low on-resistance
9.28. Size:196K zetex
zxmn2a03e6ta.pdf
ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan
9.29. Size:381K zetex
zxmn2b01fta.pdf
ZXMN2B01F 20V SOT23 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.100 @ VGS= 4.5V 2.4 0.150 @ VGS= 2.5V 2.0 20 0.200 @ VGS= 1.8V 1.7 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low gate
9.31. Size:411K zetex
zxmn2f30fhta.pdf
ZXMN2F30FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.045 @ VGS= 4.5V 4.9 0.065 @ VGS= 2.5V 4.1 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC
9.32. Size:404K zetex
zxmn2f34fhta.pdf
ZXMN2F34FH 20V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( ) ID (A) 20 0.060 @ VGS= 4.5V 4.0 0.120 @ VGS= 2.5V 2.9 Description This new generation Trench MOSFET from Zetex features low on- resistance achievable with low (2.5V) gate drive. Features D Low on-resistance 2.5V gate drive capability SOT23 package G Applications S Buck/Boost DC-
9.34. Size:198K zetex
zxmn2a01e6tc.pdf
ZXMN2A01E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.12 ID = 3.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistance
9.35. Size:196K zetex
zxmn2a03e6tc.pdf
ZXMN2A03E6 20V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 20V; RDS(ON) = 0.055 ID = 4.6A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SOT23-6 FEATURES Low on-resistan
9.36. Size:582K zetex
zxmn2b03e6ta.pdf
ZXMN2B03E6 20V SOT23-6 N-channel enhancement mode MOSFET with low gate drive capability Summary V(BR)DSS RDS(on) ( )ID (A) 0.040 @ VGS= 4.5V 5.4 0.055 @ VGS= 2.5V 4.6 20 0.075 @ VGS= 1.8V 4.0 Description This new generation trench MOSFET from Zetex features low on- resistance achievable with low gate drive. Features D Low on-resistance Fast switching speed G Low ga
9.37. Size:895K cn vbsemi
zxmn2a04dn8.pdf
ZXMN2A04DN8 www.VBsemi.tw Dual N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.025 at VGS = 4.5 V 7.1 TrenchFET Power MOSFET 20 0.035 at VGS = 2.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC SO-8 D1 D2 S1 1 D1 8 G1 2 D1 7 S2 3 D2 6 G1 G2 G2 4
9.38. Size:916K cn vbsemi
zxmn2a14fta.pdf
ZXMN2A14FTA www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/
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