CM4407 Todos los transistores

 ..1. Size:730K  cn appliedpower
 cm4407.pdf

CM4407 P-Channel 30V (D-S) Power MOSFET Description Applications The CM4407 is the P-Channel enhancement mode power Cellular Handsets and Accessories field effect transistors with high cell density, trench tech- Personal Digital Assistants nology. This high density process and design have been Portable Instrumentation optimized switching performance and especially

 9.1. Size:317K  nxp
 pmcm440vne.pdf

PMCM440VNE 12 V, N-channel Trench MOSFET 7 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 9.2. Size:318K  nxp
 pmcm4401vne.pdf

PMCM4401VNE 12V, N-channel Trench MOSFET 24 July 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Disc

 9.3. Size:317K  nxp
 pmcm4401vpe.pdf

PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic Dis

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 pmcm4401une.pdf

PMCM4401UNE 20 V, N-channel Trench MOSFET 29 May 2017 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Discha

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 pmcm4401upe.pdf

PMCM4401UPE 20 V, P-channel Trench MOSFET 7 October 2016 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 0.78 0.35 mm Trench MOSFET technology ElectroStatic D

 9.6. Size:258K  nxp
 pmcm4402upe.pdf

PMCM4402UPE 20 V, P-channel Trench MOSFET 30 May 2017 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology. 2. Features and benefits Low threshold voltage Ultra small package 0.78 x 0.78 x 0.35 mm Trench MOSFET technology ElectroStatic Dischar