ASDM100R090NP Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ASDM100R090NP
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 62 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 75 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 270 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
Encapsulados: TO220
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ASDM100R090NP datasheet
asdm100r090np.pdf
ASDM100R090NP 100V N-CHANNEL MOSFET Product Summary Features High Speed Power Switching, Logic Level VDS 100 V Enhanced Body diode dv/dt capability RDS(on),typ m VGS=10V 9 Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested ID 75 A Lead Free, Halogen Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu
asdm100r066nq.pdf
ASDM100R066NQ 100V N-CHANNEL MOSFET Features Product Summary Advanced Trench MOS Technology 100 V Low Gate Charge VDS RDS(on),Typ 5.9 @ VGS=10V m Low R DS(ON) ID 68 A 100% EAS Guaranteed Green Device Available Applications Power Management in Desktop Computer or DC/DC Converters. Isolated DC/DC Converters in Telecom and Industrial. D G S
asdm100r045nq.pdf
ASDM100R045NQ 100V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson Fully characterized avalanche voltage and current V DS 100 V Good stability and uniformity with high EAS R DS(on),TYP@ VGS=10 V 3.7 m Excellent package for good heat dissipation I D 90 A Special process technology for high ESD capability Applicatio
asdm100r750pkq.pdf
ASDM100R750PKQ -100V P-Channel MOSFET General Features Product Summary Split gate trench MOSFET technology V DS -100 V Low RDS(on) & FOM Extremely low switching loss R DS(on),Typ@ VGS=-10 V 75 m Excellent stability and uniformity I D -20 A Application Power management Portable equipment D G S P-channel TO-252 Absolute Maximum Ratings (T =25 unless
Otros transistores... FTE15C35G, FTF15N35D, FTF25N35DHVT, FTF30P35D, ASDM100N15KQ, ASDM100N34KQ, ASDM100R045NQ, ASDM100R066NQ, IRF630, ASDM100R160NKQ, ASDM100R750PKQ, ASDM12N65F, ASDM20N100Q, ASDM20N20KQ, CRJQ80N65F, CRST030N10N, CRSS028N10N
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