ASDM60N50KQ Datasheet. Equivalente

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 asdm60n50kq.pdf

ASDM60N50KQ 60V N-Channel MOSFET Product Summary FEATURE l Low gate charge V DS 60 V l Low C iss l Fast switching R DS(on),Typ@ VGS=10 V 8.5 m l 100% avalanche tested I D 50 A l Improved dv/dt capability Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 60 V VDS Gate-Source Vol

 7.1. Size:366K  ascend
 asdm60n30kq.pdf

ASDM60N30KQ 60V N-Channel MOSFET Product Summary General Features High density cell design for ultra low Rdson BVDSS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS RDS(on),Typ.@ VGS=10 V 23 m Excellent package for good heat dissipation ID 30 A Special process technology for high ESD capability Application

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 asdm60n45kq.pdf

ASDM60N45KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current R DS(on),Typ@ VGS=10 V 12 m Good stability and uniformity with high EAS Excellent package for good heat dissipation I D 45 A Special process technology for high ESD capability Application

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 asdm60n70q.pdf

ASDM60N70Q 60V N-CHANNEL MOSFET Product Summary FEATURES Trench Power DTMOS Technology V 60 V DSS Low RDS(ON) R 6.5 m DS(ON)-Typ@VGS=10V Low Gate Charge I 64 A D Optimized for Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Top View DFN5*6-8

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 asdm60n80kq.pdf

ASDM60N80KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 6.0 m Excellent package for good heat dissipation I D 80 A Application PWM Load Switching Schematic diagram TO-252-2