DMG3415U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: DMG3415U
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.9 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 294 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0425 Ohm
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de MOSFET DMG3415U

DMG3415U Datasheet (PDF)

..1. Size:128K diodes
dmg3415u.pdf

DMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-23 42.5m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 53m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020D

..2. Size:178K tysemi
dmg3415u.pdf

Product specificationDMG3415UP-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-ResistanceID V(BR)DSS RDS(on) max Low Input Capacitance TA = 25C Fast Switching Speed 42.5m @ VGS = -4.5V -4.0A -20V Low Input/Output Leakage 71m @ VGS = -1.8V -2.0A ESD Protected Up To 3kV Totally Lead-Free & Fully RoHS compliant (Notes 1 &

0.1. Size:143K diodes
dmg3415ufy4.pdf

DMG3415UFY4P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: DFN2015H4-3 39m @ VGS = -4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 52m @ VGS = -2.5V Moisture Sensitivity: Level 1 per J-STD-020

8.1. Size:141K diodes
dmg3414u.pdf

DMG3414UN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 37m

8.2. Size:188K diodes
dmg3414uq.pdf

DMG3414UQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID maxV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Fast Switching Speed 25m @ VGS = 4.5V 9A Low Input/Output Leakage 20V 29m @ VGS = 2.5V 5.5A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 37m @ VGS = 1.8V 4.8A Halogen and Antimony

8.3. Size:193K diodes
dmg3413l.pdf

DMG3413L20V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID Low Input Capacitance V(BR)DSS RDS(on) max TA = 25C Fast Switching Speed Low Input/Output Leakage 95m @ VGS = -4.5V 3.0A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) -20V 130m @ VGS = -2.5V 2.5A Halogen and Antimony Free.

8.4. Size:241K diodes
dmg3418l.pdf

DMG3418LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features ID Low On-ResistanceV(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance 60m @VGS = 10V 4 A Fast Switching Speed 30V 70m @VGS = 4.5V 3 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 st

8.5. Size:107K tysemi
dmg3414u.pdf

Product specificationDMG3414UN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-23 25m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 29m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020D 37m @ VGS = 1.8V Terminals: Finish

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

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