ASDM6802ZC Datasheet. Equivalente

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 asdm6802zc.pdf

ASDM6802ZC 30V N-CHANNEL MOSFET Features Product Summary High Power and current handing capability Lead free product is acquired V DS 30 V Surface Mount Package R DS(on),MAX@ VGS=10 V 45 m Available in SOT23-6 Package I D 4.5 A Applications PWM applications Load switch Power management D1 D2 Top View Top View G1 1 D1 6 S2 S1 2 5 3 G1

 8.1. Size:957K  ascend
 asdm68n80kq.pdf

ASDM68N80KQ 68V N-Channel MOSFET Features Product Summary Trench Power Technology V DS 68 V Low RDS(ON) Low Gate Charge R DS(on),Typ@ VGS=10 V 7.7 m Optimized for Fast-switching Applications I D 80 A Applications Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial TO-252 Schematic Diagram Absolute M

 9.1. Size:855K  ascend
 asdm60p12kq.pdf

ASDM60P12KQ -60V P-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson BVDSS -60 V Fully characterized avalanche voltage and current Excellent package for good heat dissipation RDS(on)Typ.@VGS=-10V 62 m Application -12 ID A Load switch PWM application Schematic diagram TO-252-2L top view Absolute Maximum Rati

 9.2. Size:486K  ascend
 asdm60r042nq.pdf

ASDM60R042NQ 60V N-Channel MOSFET General Features Product Summary Advanced Trench MOS Technology VDS 60 V Low On-Resistance 100% avalanche tested RDS(on).Typ@ VGS=10 V 4.4 m Fast Switching Speed 116 ID A Excellent package for good heat dissipation Application DC/DC Converters On board power for server Synchronous rectification DFN5 6-8 Ab

 9.3. Size:366K  ascend
 asdm60n30kq.pdf

ASDM60N30KQ 60V N-Channel MOSFET Product Summary General Features High density cell design for ultra low Rdson BVDSS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS RDS(on),Typ.@ VGS=10 V 23 m Excellent package for good heat dissipation ID 30 A Special process technology for high ESD capability Application

 9.4. Size:640K  ascend
 asdm60n50kq.pdf

ASDM60N50KQ 60V N-Channel MOSFET Product Summary FEATURE l Low gate charge V DS 60 V l Low C iss l Fast switching R DS(on),Typ@ VGS=10 V 8.5 m l 100% avalanche tested I D 50 A l Improved dv/dt capability Schematic diagram TO-252-2L top view Absolute Maximum Ratings (TC=25 unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage 60 V VDS Gate-Source Vol

 9.5. Size:952K  ascend
 asdm60n45kq.pdf

ASDM60N45KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current R DS(on),Typ@ VGS=10 V 12 m Good stability and uniformity with high EAS Excellent package for good heat dissipation I D 45 A Special process technology for high ESD capability Application

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 asdm65n18s.pdf

ASDM65N18S 65V N-CHANNEL MOSFET Features Product Summary Low Input Capacitance Low Miller Charge V DS V 65 Low on-resistance RDS(on) @ VGS=4.5 V Low Input/Output Leakage R DS(on),Typ@ VGS=10 V m 7.0 Pb-free lead plating; RoHS compliant I D 18 A Application Motor / Body Load Control top view ASCEND SOP-8 Absolute Maximum Ratings (T =25 C

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 asdm60n70q.pdf

ASDM60N70Q 60V N-CHANNEL MOSFET Product Summary FEATURES Trench Power DTMOS Technology V 60 V DSS Low RDS(ON) R 6.5 m DS(ON)-Typ@VGS=10V Low Gate Charge I 64 A D Optimized for Fast-switching Applications APPLICATIONS Synchronous Rectification in DC/DC and AC/DC Converters Isolated DC/DC Converters in Telecom and Industrial Top View DFN5*6-8

 9.8. Size:388K  ascend
 asdm60n80kq.pdf

ASDM60N80KQ 60V N-Channel MOSFET General Features Product Summary High density cell design for ultra low Rdson V DS 60 V Fully characterized avalanche voltage and current Good stability and uniformity with high EAS R DS(on),Typ@ VGS=10 V 6.0 m Excellent package for good heat dissipation I D 80 A Application PWM Load Switching Schematic diagram TO-252-2