ASDM30N90Q Datasheet. Equivalente

 ..1. Size:356K  ascend
 asdm30n90q.pdf

ASDM30N90Q 30V N-Channel MOSFET General Features Product Summary Low Gate Charge Advanced Trench Technology VDS 30 V Provide Excellent RDS(ON) RDS(on),Typ.@ VGS=10 V 4.3 m High Power and Current Handling Capability 90 Application ID A Load Swtich PWM applications Power management DFN5*6-8 N-Channel Absolute Maximum Ratings (TA =25 C unless ot

 5.1. Size:303K  ascend
 asdm30n90kq.pdf

ASDM30N90KQ 30V N-Channel MOSFET General Features Product Summary Low Gate Charge Advanced Trench Technology VDS 30 V Provide Excellent RDS(ON) RDS(on),Typ.@ VGS=10 V 3.6 m High Power and Current Handling Capability 90 ID A Application Load Swtich PWM applications Power management 1 TO-252 N-channel Absolute Maximum Ratings (TA =25 C unless o

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 asdm30n65e-r.pdf

ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.

 7.2. Size:348K  1
 asdm30n55e-r.pdf

ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe

 7.3. Size:871K  ascend
 asdm30n120kq.pdf

ASDM30N120KQ 30V N-Channel MOSFET Product Summary Features V DS 30 V Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V RDS(on),TYP@ VGS=10 V 2.5 m Fast Switching I D 120 A 100% Avalanche test Pb-free lead plating; RoHS compliant Schematic diagram TO-252-2L top view Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Rat

 7.4. Size:805K  ascend
 asdm30n100kq.pdf

ASDM30N100KQ 30V N-Channel MOSFET Features Product Summary 100% EAS Guaranteed V DS 30 V Green Device Available R DS(on),Typ@ VGS=10 V 3.3 m Super Low Gate Charge I D 100 A Excellent CdV/dt effect decline Advanced high cell density Trench technology Application Lithium-Ion Secondary Batteries Load Switch DC-DC converters and Off-line UPS Motor Contro

 7.5. Size:315K  ascend
 asdm30n65e.pdf

ASDM30N65E 30V N-CHANNEL MOSFET Product Summary Feature l Low Gate Charge VDS 30 V l Green Device Available 4.5 m RDS(on),typ VGS=10V l Super Low Gate Charge A 65 ID l Excellent CdV/dt effect decline l Advanced high cell density Trench technology Applications l Power Management in Desktop Computer or DC/DC Converters. l Isolated DC/DC Converters in Telecom and Industrial.

 7.6. Size:348K  ascend
 asdm30n55e.pdf

ASDM30N55E 30V N-CHANNEL MOSFET Feature Product Summary 100% EAS Guaranteed VDS 30 V Green Device Available Super Low Gate Charge RDS(on),typ VGS=10V 4.8 m Excellent CdV/dt effect decline A 55 ID Advanced high cell density Trench technology Application Power Management in Inverter System top view DFN3.3*3.3-8 Maximum ratings, at T A=25 C, unless othe

 7.7. Size:636K  ascend
 asdm30n75kq.pdf

ASDM30N75KQ 30V N-CHANNEL MOSFET Features Product Summary 30V,75A R =4.8m (Typ.) @ V =10V V DS 30 V DS(ON) GS R =6.5m (Typ.) @ V =4.5V DS(ON) GS Advanced Trench Technology R DS(on),TYP@ VGS=10 V 4.8 m Provide Excellent R and Low Gate Charge DS(ON) 75 A ID Application Load Switch PWM Application Absolute Maximum Ratings (T =25 unless

 7.8. Size:596K  ascend
 asdm30n150q.pdf

ASDM30N150Q 30V N-Channel MOSFET Product Summary Features V DS 30 V High ruggedness Low Gate Charge (Typ 143nC) R DS(on),Typ@ VGS=10 V 1.7 m Improved dv/dt Capability 100% Avalanche Tested I D 150 A Application Synchronous Rectification, Li Battery Protect Board, Inverter top view DFN5x6-8 Absolute maximum ratings Symbol Parameter Value Unit VDSS Drain

 7.9. Size:510K  ascend
 asdm30n120q.pdf

ASDM30N120Q 30V N-Channel MOSFET Product Summary Features V DS 30 V Enhancement mode Very low on-resistance RDS(on) @ VGS=4.5 V RDS(on),TYP@ VGS=10 V 2.1 m Fast Switching I D 120 A 100% Avalanche test Pb-free lead plating; RoHS compliant top view DFN5x6-8 Maximum ratings, at TA =25 C, unless otherwise specified Symbol Parameter Rating Unit 30 V V(BR