MS34P01 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MS34P01  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.38 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 4.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 3.2 nS

Cossⓘ - Capacitancia de salida: 115 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.053 Ohm

Encapsulados: SOT23

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MS34P01 datasheet

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MS34P01

MS34P01 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS34P01 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The device is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The devi

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MS34P01

MS34P07 P-Channel 30-V (D-S) MOSFET Description Graphic Symbol The MS34P07 is the highest performance trench P-ch MOSFETs with extreme high cell density, which provide excellent RDS(ON) and gate charge for use as a load switch or in PWM applications. The device meets the RoHS and Green Product requirement with full function reliability approved. Features Package Dimension A

Otros transistores... B50T040F, B50T070F, BP0405SCG, BPM0306CG, BPM0405CG, BPMS04N003M, MS23N06A, MS23P03, AO3400, MS34P07, MS40N05, MS40P05, MS40P05AU, MS60P03, MSB100N023, MSD40P45, MSD60P16