CS40N27 Datasheet. Equivalente

 ..1. Size:591K  cass
 cs40n27.pdf

CS40N27 N-Channel Trench Power MOSFET General Description The CS40N27 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low R is suitable for PWM, load DS(ON) switching . Features VDS=40V; ID=170A@ VGS=10V; RDS(ON)

 8.1. Size:1495K  jilin sino
 jcs40n25wt jcs40n25ant.pdf

N R N-CHANNEL MOSFET JCS40N25T Package MAIN CHARACTERISTICS ID 40 A VDSS 250 V Rdson-max 68m @Vgs=10V Qg-typ 87 nC APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts UPS based on half bridge

 8.2. Size:1563K  jilin sino
 jcs40n25fc jcs40n25sc jcs40n25wc.pdf

 8.3. Size:216K  crhj
 cs40n20 a8.pdf

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.4. Size:233K  crhj
 cs40n20 anh.pdf

Silicon N-Channel Power MOSFET R CS40N20 ANH General Description VDSS 200 V CS40N20 ANH the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vario

 8.5. Size:222K  crhj
 cs40n20f a9h.pdf

Silicon N-Channel Power MOSFET R CS40N20F A9H General Description VDSS 200 V CS40N20FA9H the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in variou

 8.6. Size:216K  crhj
 cs40n20f a9e.pdf

Silicon N-Channel Power MOSFET R CS40N20F A9E General Description VDSS 200 V CS40N20F A9E the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.047 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in vari

 8.7. Size:216K  wuxi china
 cs40n20a8.pdf

Silicon N-Channel Power MOSFET R CS40N20 A8 General Description VDSS 200 V CS40N20 A8 the silicon N-channel Enhanced ID 40 A PD (TC=25 ) 250 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 0.054 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various po

 8.8. Size:800K  convert
 cs40n20f cs40n20p.pdf

nvert CS40N20F,CS40N20P Suzhou Convert Semiconductor Co ., Ltd. 200V N-Channel MOSFET FEATURES Proprietary New Planar Technology RDS(ON),typ.=50m @VGS=10V Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode APPLICATIONS DC-DC Converters DC-AC Inverters for UPS SMPS and Motor controls Device Marking and Package Information Device Package