CS55N50 Datasheet. Equivalente

 ..1. Size:630K  cass
 cs55n50.pdf

CS55N50 N-Channel Trench Power MOSFET General Description The CS55N50 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM, load switching . Features VDS=55V; ID=105A@ VGS=10V; RDS(ON)

 9.1. Size:104K  china
 cs55n10.pdf

CS55N10 N PD TC=25 250 W 2 W/ ID VGS=10V,TC=25 55 A VGS 20 V Tjm +150 Tstg -55 +150 RthJC 0.5 /W BVDSS VGS=0V,ID=5mA 100 V RDS on VGS=10V,ID=27.5A 0.04 VGS th VDS=VGS,ID=1mA 2.0 4.5 V

 9.2. Size:2056K  wuxi china
 cs55n06a4.pdf

Silicon N-Channel Power Trench MOSFET R CS55N06 A4 General Description VDSS 60 V CS55N06 A4, the silicon N-channel Enhanced ID 55 A RDS(ON)Typ 10 m VDMOSFETs, is obtained by the high density Trenchtechnology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circ

 9.3. Size:1086K  wuxi china
 cs55n25akr.pdf

Silicon N-Channel Power MOSFET R CS55N25 AKR General Description VDSS 250 V CS55N25 AKR the silicon N-channel Enhanced ID 55 A PD (TC=25 ) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various powe

 9.4. Size:470K  wuxi china
 cs55n25a8r-g.pdf

Silicon N-Channel Power MOSFET R CS55N25 A8R-G General Description VDSS 250 V CS55N25 A8R-G the silicon N-channel Enhanced ID 55 A PD (TC=25 ) 300 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 69 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various